A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

U. Kaiser, S. B. Newcomb, W. M. Stobbs, M. Adamik, A. Fissel, W. Richter

Research output: Article

10 Citations (Scopus)

Abstract

The effects of different growth parameters on the microstructure of the SiC films formed during simultaneous two-source molecular-beam-epitaxial (MBE) deposition have been investigated. Substrate temperatures as low as 750-900 °C have been used. The relationship between a number of different growth morphologies and deposition conditions has been established. The formation of single-crystal 3C films has been found to occur at low growth rates but within a limited Si : C adatom ratio. A combination of transmission electron microscopy (TEM) and atomic force microscopy (AFM) has been used to examine the different films, and the results of these investigations are described.

Original languageEnglish
Pages (from-to)3571-3579
Number of pages9
JournalJournal of Materials Research
Volume13
Issue number12
Publication statusPublished - dec. 1998

Fingerprint

Molecular beam epitaxy
molecular beam epitaxy
Transmission electron microscopy
transmission electron microscopy
Substrates
Molecular beams
Adatoms
adatoms
molecular beams
Atomic force microscopy
Single crystals
atomic force microscopy
microstructure
Microstructure
single crystals
Temperature
temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy. / Kaiser, U.; Newcomb, S. B.; Stobbs, W. M.; Adamik, M.; Fissel, A.; Richter, W.

In: Journal of Materials Research, Vol. 13, No. 12, 12.1998, p. 3571-3579.

Research output: Article

Kaiser, U. ; Newcomb, S. B. ; Stobbs, W. M. ; Adamik, M. ; Fissel, A. ; Richter, W. / A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy. In: Journal of Materials Research. 1998 ; Vol. 13, No. 12. pp. 3571-3579.
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