A theoretical study on doping of phosphorus in chemical vapor deposited SiC layers

T. Hornos, A. Gali, R. P. Devaty, W. J. Choyke

Research output: Conference contribution

2 Citations (Scopus)

Abstract

Ab initio supercell calculations have been carried out to investigate the doping of phosphorus in chemical vapor deposited (CVD) SiC layers. CVD conditions have been simulated by using the appropriate chemical potentials for hydrogen and phosphorus (P). We found that the most abundant defect is P at Si-site followed by P at C-site. The calculated concentrations of the P-donors and free carriers in CVD grown SiC agree with the experimental results.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
PublisherTrans Tech Publications Ltd
Pages605-608
Number of pages4
EditionPART 1
ISBN (Print)9780878494255
DOIs
Publication statusPublished - jan. 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: szept. 18 2005szept. 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Hornos, T., Gali, A., Devaty, R. P., & Choyke, W. J. (2006). A theoretical study on doping of phosphorus in chemical vapor deposited SiC layers. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 605-608). (Materials Science Forum; Vol. 527-529, No. PART 1). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-425-1.605