A theoretical study on aluminium-related defects in SiC

T. Hornos, A. Gali, N. T. Son, E. Janzén

Research output: Conference contribution

4 Citations (Scopus)

Abstract

We have investigated several aluminum-related complexes in 4H-SiC by ab initio supercell calculations. The binding energies of the defects predict high thermal stability and complex formation between aluminum and carbon interstitials in SiC. We show that the carbon vacancy can be attached to a shallow the aluminum acceptor and form a very stable defect. We also found that aluminum interstitial forms stable and metastable complexes with one or two carbon interstitials. The possible relation of these defects to the recently found aluminum-related DLTS centers is also discussed.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials
EditorsN. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina, A. Horsfall
PublisherTrans Tech Publications Ltd
Pages445-448
Number of pages4
ISBN (Print)0878494421, 9780878494422, 9780878494422
DOIs
Publication statusPublished - jan. 1 2007
Event6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006 - Newcastle upon Tyne, United Kingdom
Duration: szept. 3 2006szept. 7 2006

Publication series

NameMaterials Science Forum
Volume556-557
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006
CountryUnited Kingdom
CityNewcastle upon Tyne
Period9/3/069/7/06

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Hornos, T., Gali, A., Son, N. T., & Janzén, E. (2007). A theoretical study on aluminium-related defects in SiC. In N. Wright, C. M. Johnson, K. Vassilevski, I. Nikitina, & A. Horsfall (Eds.), Silicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials (pp. 445-448). (Materials Science Forum; Vol. 556-557). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.556-557.445