Pairs of carbon nitride films have simultaneously been deposited by ArF excimer laser ablation of a graphite target in the 2-50 Pa nitrogen pressure window, with one substrate parallel and 48-mm apart from the target in the traditional on-axis geometry, and the other placed in the target plane. The pressure dependence of the apparent growth rate, defined as the measured thickness per number of pulses, is significantly different for the two geometries. In the traditional geometry the growth rate is almost constant at around 0.0035 and 0.023 nm/pulse for 1 and 5 J cm-2, respectively, while in the target plane it increases proportionally to the logarithm of the nitrogen pressure for both fluences. Complementary surface characterisation by atomic force microscopy reveals that the films grown in the novel geometry, referred to as inverse pulsed laser deposition, are made up of smaller grains and appear to be more compact.
|Number of pages||3|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - jan. 1 2004|
ASJC Scopus subject areas
- Materials Science(all)