Photoconductive optoelectronic pulse‐forming switches have been fabricated from vapor‐phase epitaxially grown GaAs‐based layer structures. The fabrication process is compatible with the MESFET/MMIC technology. The light‐absorbing region is thinned by chemical etching, thus changing the actual carrier lifetime in this region. The switches showed off/on resistance ratios of about 500 even at about 0.1‐mW incident optical power. The pulse response of the devices is limited by the lifetime of charge carriers.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering