Abstract
A new method to determine the breakdown voltage of SiPMs is presented. It is based on a DC model which describes the breakdown phenomenon by distinct avalanche turn-on (V01) and turn-off (V10) voltages. It is shown that traditional DC methods relying on the analysis of reverse current-voltage curves measure a value either near V01 or between V01 and V10 while V10 results by complex gain-voltage measurements. The proposed method reveals how the microcell population distributes around V01. It is found that if this distribution is assumed to be normal, then both V01 and V10 of the SiPM can readily be extracted from current-voltage curves. Measurements are in good agreement with the theoretical model.
| Original language | English |
|---|---|
| Pages (from-to) | 55-59 |
| Number of pages | 5 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
| Volume | 849 |
| DOIs | |
| Publication status | Published - márc. 21 2017 |
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ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation
Cite this
A model based DC analysis of SiPM breakdown voltages. / Nagy, Ferenc; Hegyesi, Gyula; Kalinka, Gábor; Molnár, J.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 849, 21.03.2017, p. 55-59.Research output: Review article
}
TY - JOUR
T1 - A model based DC analysis of SiPM breakdown voltages
AU - Nagy, Ferenc
AU - Hegyesi, Gyula
AU - Kalinka, Gábor
AU - Molnár, J.
PY - 2017/3/21
Y1 - 2017/3/21
N2 - A new method to determine the breakdown voltage of SiPMs is presented. It is based on a DC model which describes the breakdown phenomenon by distinct avalanche turn-on (V01) and turn-off (V10) voltages. It is shown that traditional DC methods relying on the analysis of reverse current-voltage curves measure a value either near V01 or between V01 and V10 while V10 results by complex gain-voltage measurements. The proposed method reveals how the microcell population distributes around V01. It is found that if this distribution is assumed to be normal, then both V01 and V10 of the SiPM can readily be extracted from current-voltage curves. Measurements are in good agreement with the theoretical model.
AB - A new method to determine the breakdown voltage of SiPMs is presented. It is based on a DC model which describes the breakdown phenomenon by distinct avalanche turn-on (V01) and turn-off (V10) voltages. It is shown that traditional DC methods relying on the analysis of reverse current-voltage curves measure a value either near V01 or between V01 and V10 while V10 results by complex gain-voltage measurements. The proposed method reveals how the microcell population distributes around V01. It is found that if this distribution is assumed to be normal, then both V01 and V10 of the SiPM can readily be extracted from current-voltage curves. Measurements are in good agreement with the theoretical model.
KW - Avalanche turn-off
KW - Avalanche turn-on
KW - Breakdown voltage
KW - I-V curve model
KW - SiPM
UR - http://www.scopus.com/inward/record.url?scp=85009195262&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85009195262&partnerID=8YFLogxK
U2 - 10.1016/j.nima.2017.01.002
DO - 10.1016/j.nima.2017.01.002
M3 - Review article
AN - SCOPUS:85009195262
VL - 849
SP - 55
EP - 59
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
SN - 0168-9002
ER -