• 519 Citations
  • 12 h-Index
1970 …2011

Research output per year

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Research Output

  • 519 Citations
  • 12 h-Index
  • 25 Article
  • 3 Conference article
  • 2 Conference contribution
2011

Silicon nitride based nanocomposites produced by two different sintering methods

Tapasztó, O., Kun, P., Wéber, F., Gergely, G., Balázsi, K., Pfeifer, J., Arató, P., Kidari, A., Hampshire, S. & Balázsi, C., dec. 1 2011, In : Ceramics International. 37, 8, p. 3457-3461 5 p.

Research output: Article

31 Citations (Scopus)
2010

Tribology study of silicon nitride-based nanocomposites with carbon additions

Pfeifer, J., Sáfrán, G., Wéber, F., Zsigmond, V., Koszor, O., Arató, P. & Balázsi, C., dec. 15 2010, Materials Science, Testing and Informatics V. p. 235-238 4 p. (Materials Science Forum; vol. 659).

Research output: Conference contribution

11 Citations (Scopus)
2009
2008

Microstructural characterization of the oxide scale on nitride bonded SiC-ceramics

Horváth, E., Zsíros, G., Tóth, A. L., Sajó, I., Arató, P. & Pfeifer, J., jan. 1 2008, In : Ceramics International. 34, 1, p. 151-155 5 p.

Research output: Article

10 Citations (Scopus)

Nanosize hexagonal tungsten oxide for gas sensing applications

Balázsi, C., Wang, L., Zayim, E. O., Szilágyi, I. M., Sedlacková, K., Pfeifer, J., Tóth, A. L. & Gouma, P. I., jan. 24 2008, In : Journal of the European Ceramic Society. 28, 5, p. 913-917 5 p.

Research output: Article

92 Citations (Scopus)
26 Citations (Scopus)
2007

Nanostructured hexagonal tungsten oxides for ammonia sensing

Wang, L., Pfeifer, J., Balázsi, C., Szilágyi, I. M. & Gouma, P. I., dec. 1 2007, Nanosensing: Materials, Devices, and Systems III. 67690E. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 6769).

Research output: Conference contribution

11 Citations (Scopus)

Synthesis and sensing properties to NH3 of hexagonal WO 3 metastable nanopowders

Wang, L., Pfeifer, J., Balázsi, C. & Gouma, P. I., aug. 1 2007, In : Materials and Manufacturing Processes. 22, 6, p. 773-776 4 p.

Research output: Article

22 Citations (Scopus)
2003
12 Citations (Scopus)
2002
31 Citations (Scopus)
2001

The observation of cubic tungsten trioxide at high-temperature dehydration of tungstic acid hydrate

Balázsi, C., Farkas-Jahnke, M., Kotsis, I., Petrás, L. & Pfeifer, J., máj. 1 2001, In : Solid State Ionics. 141-142, p. 411-416 6 p.

Research output: Conference article

48 Citations (Scopus)
1999
16 Citations (Scopus)
28 Citations (Scopus)
1996

Growth and morphology of W18O49 crystals produced by microwave decomposition of ammonium paratungstate

Pfeifer, J., Badaljan, E., Tekula-Buxbaum, P., Kovács, T., Geszti, O., Tóth, A. L. & Lunk, H. J., dec. 1 1996, In : Journal of Crystal Growth. 169, 4, p. 727-733 7 p.

Research output: Article

40 Citations (Scopus)
1995

A reinvestigation of the preparation of tungsten oxide hydrate WO3, 1/3H2O

Pfeifer, J., Guifang, C., Tekula-Buxbaum, P., Kiss, B. A., Farkas-Jahnke, M. & Vadasdi, K., jan. 1 1995, In : Journal of Solid State Chemistry. 119, 1, p. 90-97 8 p.

Research output: Article

81 Citations (Scopus)
1994

Dielectric properties of selected tungsten compounds from 60 MHz to 9.44 GHz

Pfeifer, J., Csaba, I. & Elek, K., aug. 1994, In : Journal of Solid State Chemistry. 111, 2, p. 349-356 8 p.

Research output: Article

7 Citations (Scopus)
1993

Microwave decomposition of solid crystalline ammonium paratungstate and ammonium metatungstate

Pfeifer, J., Badaljan, E. G., Tekula-Buxbaum, P. & Vadasdi, K., aug. 1993, In : Journal of Solid State Chemistry. 105, 2, p. 588-594 7 p.

Research output: Article

9 Citations (Scopus)
1 Citation (Scopus)
1992

Electron mobility measured in undoped InGaAs epitaxial layer grown on n-InP substrate

Somogyi, K. & Pfeifer, J., dec. 1 1992, In : Applied Physics Letters. 61, 18, p. 2220-2221 2 p.

Research output: Article

3 Citations (Scopus)

Identification of the source of deficient functioning in LOC laser heterostructures

Malag, A., Pfeifer, J., Csontos, L., Lábadi, Z. & Hoffmann, G., márc. 1 1992, In : Acta Physica Hungarica. 72, 1, p. 89-100 12 p.

Research output: Article

1983

Electrical properties of donors in gallium phosphide

Pödör, B., Pfeifer, J., Csontos, L., Nádor, N. & Deák, F., ápr. 16 1983, In : physica status solidi (a). 76, 2, p. 695-704 10 p.

Research output: Article

5 Citations (Scopus)
1980

Comments on the properties of an NH4OH‐H2O2 etch on epitaxial GaAs

Radácsi, Mojzes, I. & Pfeifer, J., 1980, In : Kristall und Technik. 15, 6, p. 747-751 5 p.

Research output: Article

1979

N doping in the liquid phase epitaxial growth of GaP:N light emitting diodes

Pfeifer, J., Csontos, L. & Gál, M., okt. 1 1979, In : Acta Physica Academiae Scientiarum Hungaricae. 47, 1-3, p. 45-50 6 p.

Research output: Article

Residual donors in liquid phase epitaxial GaP

Põdör, B. & Pfeifer, J., okt. 1 1979, In : Acta Physica Academiae Scientiarum Hungaricae. 47, 1-3, p. 75-81 7 p.

Research output: Article

1 Citation (Scopus)
1978
2 Citations (Scopus)
1976

Ohmic contact to p-type GaP

Pfeifer, J., nov. 1976, In : Solid State Electronics. 19, 11, p. 927-928,IN3-IN4,929

Research output: Article

17 Citations (Scopus)
1974

The investigation of Ge-Si layer structures by means of the etching rate method (ERM)

Pfeifer, J. & Haraszthy, É. S., febr. 1974, In : Thin Solid Films. 20, 2, p. S31-S32

Research output: Article

1972

Oriented growth of Si layers on ZnS single-crystal substrates

Pfeifer, J., Haraszthy, É. S. & Farkas-Jahnke, M., júl. 1972, In : Thin Solid Films. 11, 1, p. 71-79 9 p.

Research output: Article

2 Citations (Scopus)

SiGe heteroepitaxial structures evaporated in ultra-high vacuum

Pfeifer, J., Varga, L. & Szentpáli, B., júl. 1972, In : Thin Solid Films. 11, 1, p. 59-69 11 p.

Research output: Article

11 Citations (Scopus)
1970
2 Citations (Scopus)