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19952020

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2020

Ab initio theory of the negatively charged boron vacancy qubit in hexagonal boron nitride

Ivády, V., Barcza, G., Thiering, G., Li, S., Hamdi, H., Chou, J. P., Legeza, O. & Gali, A., dec. 1 2020, In : npj Computational Materials. 6, 1, 41.

Research output: Article

Open Access

Immunomodulatory potential of differently-terminated ultra-small silicon carbide nanoparticles

Bĕlinová, T., Machová, I., Beke, D., Fučíková, A., Gali, A., Humlová, Z., Valenta, J. & Kalbáčová, M. H., márc. 2020, In : Nanomaterials. 10, 3, 573.

Research output: Article

Open Access

Interlayer Bonding in Two-Dimensional Materials: The Special Case of SnP3and GeP3

Slassi, A., Gali, S. M., Pershin, A., Pershin, A., Gali, A., Gali, A., Cornil, J. & Beljonne, D., jún. 4 2020, In : Journal of Physical Chemistry Letters. 11, 11, p. 4503-4510 8 p.

Research output: Article

Novel method for electroless etching of 6H–SiC

Károlyházy, G., Beke, D., Zalka, D., Lenk, S., Krafcsik, O., Kamarás, K. & Gali, Á., márc. 2020, In : Nanomaterials. 10, 3, 538.

Research output: Article

Open Access

Room-temperature coherent control of implanted defect spins in silicon carbide

Yan, F. F., Yi, A. L., Wang, J. F., Li, Q., Yu, P., Zhang, J. X., Gali, A., Wang, Y., Xu, J. S., Ou, X., Li, C. F. & Guo, G. C., dec. 1 2020, In : npj Quantum Information. 6, 1, 38.

Research output: Article

Open Access

Room-Temperature Defect Qubits in Ultrasmall Nanocrystals

Beke, D., Valenta, J., Károlyházy, G., Lenk, S., Czigány, Z., Márkus, B. G., Kamarás, K., Simon, F. & Gali, A., márc. 5 2020, In : Journal of Physical Chemistry Letters. 11, 5, p. 1675-1681 7 p.

Research output: Article

Open Access

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Morioka, N., Babin, C., Nagy, R., Gediz, I., Hesselmeier, E., Liu, D., Joliffe, M., Niethammer, M., Dasari, D., Vorobyov, V., Kolesov, R., Stöhr, R., Ul-Hassan, J., Son, N. T., Ohshima, T., Udvarhelyi, P., Thiering, G., Gali, A., Wrachtrup, J. & Kaiser, F., dec. 1 2020, In : Nature communications. 11, 1, 2516.

Research output: Article

Open Access
1 Citation (Scopus)

Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H-Si C

Udvarhelyi, P., Thiering, G., Morioka, N., Babin, C., Kaiser, F., Lukin, D., Ohshima, T., Ul-Hassan, J., Son, N. T., Vučković, J., Wrachtrup, J. & Gali, A., máj. 2020, In : Physical Review Applied. 13, 5, 054017.

Research output: Article

2019

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Widmann, M., Niethammer, M., Fedyanin, D. Y., Khramtsov, I. A., Rendler, T., Booker, I. D., Ul Hassan, J., Morioka, N., Chen, Y. C., Ivanov, I. G., Son, N. T., Ohshima, T., Bockstedte, M., Gali, A., Bonato, C., Lee, S. Y. & Wrachtrup, J., okt. 9 2019, In : Nano Letters. 19, 10, p. 7173-7180 8 p.

Research output: Article

9 Citations (Scopus)

Electrically driven optical interferometry with spins in silicon carbide

Miao, K. C., Bourassa, A., Anderson, C. P., Whiteley, S. J., Crook, A. L., Bayliss, S. L., Wolfowicz, G., Thiering, G., Udvarhelyi, P., Ivády, V., Abe, H., Ohshima, T., Gali, Á. & Awschalom, D. D., nov. 22 2019, In : Science Advances. 5, 11, eaay0527.

Research output: Article

Open Access
3 Citations (Scopus)

Evidence for Primal sp 2 Defects at the Diamond Surface: Candidates for Electron Trapping and Noise Sources

Stacey, A., Dontschuk, N., Chou, J. P., Broadway, D. A., Schenk, A. K., Sear, M. J., Tetienne, J. P., Hoffman, A., Prawer, S., Pakes, C. I., Tadich, A., de Leon, N. P., Gali, A. & Hollenberg, L. C. L., febr. 8 2019, In : Advanced Materials Interfaces. 6, 3, 1801449.

Research output: Article

13 Citations (Scopus)

High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Nagy, R., Niethammer, M., Widmann, M., Chen, Y. C., Udvarhelyi, P., Bonato, C., Hassan, J. U., Karhu, R., Ivanov, I. G., Son, N. T., Maze, J. R., Ohshima, T., Soykal, Ö. O., Gali, Á., Lee, S. Y., Kaiser, F. & Wrachtrup, J., dec. 1 2019, In : Nature communications. 10, 1, 1954.

Research output: Article

Open Access
23 Citations (Scopus)

Identification of divacancy and silicon vacancy qubits in 6H-SiC

Davidsson, J., Ivády, V., Armiento, R., Ohshima, T., Son, N. T., Gali, A. & Abrikosov, I. A., márc. 18 2019, In : Applied Physics Letters. 114, 11, 112107.

Research output: Article

3 Citations (Scopus)

Optically Active Defects at the Si C/Si O2 Interface

Johnson, B. C., Woerle, J., Haasmann, D., Lew, C. T. K., Parker, R. A., Knowles, H., Pingault, B., Atature, M., Gali, A., Dimitrijev, S., Camarda, M. & McCallum, J. C., okt. 11 2019, In : Physical Review Applied. 12, 4, 044024.

Research output: Article

1 Citation (Scopus)

Optical Properties of Vanadium in 4 H Silicon Carbide for Quantum Technology

Spindlberger, L., Csóré, A., Thiering, G., Putz, S., Karhu, R., Hassan, J. U., Son, N. T., Fromherz, T., Gali, A. & Trupke, M., júl. 9 2019, In : Physical Review Applied. 12, 1, 014015.

Research output: Article

6 Citations (Scopus)

Oxygenated (113) diamond surface for nitrogen-vacancy quantum sensors with preferential alignment and long coherence time from first principles

Li, S., Chou, J. P., Wei, J., Sun, M., Hu, A. & Gali, A., ápr. 2019, In : Carbon. 145, p. 273-280 8 p.

Research output: Article

4 Citations (Scopus)

Size-dependent photocatalytic activity of cubic boron phosphide nanocrystals in the quantum confinement regime

Sugimoto, H., Somogyi, B., Nakamura, T., Zhou, H., Ichihashi, Y., Nishiyama, S., Gali, A. & Fujii, M., szept. 19 2019, In : Journal of Physical Chemistry C. 123, 37, p. 23226-23235 10 p.

Research output: Article

Spectrally Stable Defect Qubits with no Inversion Symmetry for Robust Spin-To-Photon Interface

Udvarhelyi, P., Nagy, R., Kaiser, F., Lee, S. Y., Wrachtrup, J. & Gali, A., ápr. 8 2019, In : Physical Review Applied. 11, 4, 044022.

Research output: Article

10 Citations (Scopus)

Stabilization of point-defect spin qubits by quantum wells

Ivády, V., Davidsson, J., Delegan, N., Falk, A. L., Klimov, P. V., Whiteley, S. J., Hruszkewycz, S. O., Holt, M. V., Heremans, F. J., Son, N. T., Awschalom, D. D., Abrikosov, I. A. & Gali, A., dec. 1 2019, In : Nature communications. 10, 1, 5607.

Research output: Article

Open Access
Open Access
7 Citations (Scopus)
2018

Ab initio description of highly correlated states in defects for realizing quantum bits

Bockstedte, M., Schütz, F., Garratt, T., Ivády, V. & Gali, A., dec. 1 2018, In : npj Quantum Materials. 3, 1, 31.

Research output: Article

16 Citations (Scopus)
33 Citations (Scopus)

Ab Initio Spin-Strain Coupling Parameters of Divacancy Qubits in Silicon Carbide

Udvarhelyi, P. & Gali, A., nov. 5 2018, In : Physical Review Applied. 10, 5, 054010.

Research output: Article

4 Citations (Scopus)

Direct Observation of Transition from Solid-State to Molecular-Like Optical Properties in Ultrasmall Silicon Carbide Nanoparticles

Beke, D., Fučíková, A., Jánosi, T. Z., Károlyházy, G., Somogyi, B., Lenk, S., Krafcsik, O., Czigány, Z., Erostyák, J., Kamarás, K., Valenta, J. & Gali, A., nov. 21 2018, In : Journal of Physical Chemistry C. 122, 46, p. 26713-26721 9 p.

Research output: Article

2 Citations (Scopus)

Excitation properties of the divacancy in 4H -SiC

Magnusson, B., Son, N. T., Csóré, A., Gällström, A., Ohshima, T., Gali, A. & Ivanov, I. G., nov. 5 2018, In : Physical Review B. 98, 19, 195202.

Research output: Article

12 Citations (Scopus)

First principles predictions of magneto-optical data for semiconductor point defect identification: The case of divacancy defects in 4H-SiC

Davidsson, J., Ivády, V., Armiento, R., Son, N. T., Gali, A. & Abrikosov, I. A., febr. 2018, In : New Journal of Physics. 20, 2, 023035.

Research output: Article

9 Citations (Scopus)
7 Citations (Scopus)

Identification of nickel-vacancy defects by combining experimental and ab initio simulated photocurrent spectra

Londero, E., Bourgeois, E., Nesladek, M. & Gali, A., jún. 12 2018, In : Physical Review B. 97, 24, 241202.

Research output: Article

9 Citations (Scopus)

Identification of the binding site between bovine serum albumin and ultrasmall SiC fluorescent biomarkers

Dravecz, G., Jánosi, T. Z., Beke, D., Major, D., Károlyházy, G., Erostyák, J., Kamarás, K. & Gali, Á., jan. 1 2018, In : Physical Chemistry Chemical Physics. 20, 19, p. 13419-13429 11 p.

Research output: Article

5 Citations (Scopus)
2 Citations (Scopus)

Room temperature solid-state quantum emitters in the telecom range

Zhou, Y., Wang, Z., Rasmita, A., Kim, S., Berhane, A., Bodrog, Z., Adamo, G., Gali, A., Aharonovich, I. & Gao, W. B., márc. 30 2018, In : Science Advances. 4, 3, eaar3580.

Research output: Article

24 Citations (Scopus)

Spin-strain interaction in nitrogen-vacancy centers in diamond

Udvarhelyi, P., Shkolnikov, V. O., Gali, A., Burkard, G. & Pályi, A., aug. 2 2018, In : Physical Review B. 98, 7, 075201.

Research output: Article

23 Citations (Scopus)

Strongly anisotropic spin relaxation in the neutral silicon vacancy center in diamond

Rose, B. C., Thiering, G., Tyryshkin, A. M., Edmonds, A. M., Markham, M. L., Gali, A., Lyon, S. A. & De Leon, N. P., dec. 20 2018, In : Physical Review B. 98, 23, 235140.

Research output: Article

2 Citations (Scopus)

Strongly inhomogeneous distribution of spectral properties of silicon-vacancy color centers in nanodiamonds

Lindner, S., Bommer, A., Muzha, A., Krueger, A., Gines, L., Mandal, S., Williams, O., Londero, E., Gali, A. & Becher, C., nov. 7 2018, In : New Journal of Physics. 20, 11, 115002.

Research output: Article

9 Citations (Scopus)

Theory of the optical spin-polarization loop of the nitrogen-vacancy center in diamond

Thiering, G. & Gali, A., aug. 29 2018, In : Physical Review B. 98, 8, 085207.

Research output: Article

16 Citations (Scopus)

Vibrational modes of negatively charged silicon-vacancy centers in diamond from ab initio calculations

Londero, E., Thiering, G., Razinkovas, L., Gali, A. & Alkauskas, A., júl. 27 2018, In : Physical Review B. 98, 3, 035306.

Research output: Article

10 Citations (Scopus)

Vibrational relaxation dynamics of the nitrogen-vacancy center in diamond

Ulbricht, R., Dong, S., Gali, A., Meng, S. & Loh, Z. H., jún. 8 2018, In : Physical Review B. 97, 22, 220302.

Research output: Article

6 Citations (Scopus)
2017
24 Citations (Scopus)

Ab initio theory of the N2 v defect in diamond for quantum memory implementation

Udvarhelyi, P., Thiering, G., Londero, E. & Gali, A., okt. 30 2017, In : Physical Review B. 96, 15, 155211.

Research output: Article

3 Citations (Scopus)

All-optical hyperpolarization of electron and nuclear spins in diamond

Green, B. L., Breeze, B. G., Rees, G. J., Hanna, J. V., Chou, J. P., Ivády, V., Gali, A. & Newton, M. E., aug. 1 2017, In : Physical Review B. 96, 5, 054101.

Research output: Article

10 Citations (Scopus)

Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride

Berhane, A. M., Jeong, K. Y., Bodrog, Z., Fiedler, S., Schröder, T., Triviño, N. V., Palacios, T., Gali, A., Toth, M., Englund, D. & Aharonovich, I., márc. 28 2017, In : Advanced Materials. 29, 12, 1605092.

Research output: Article

34 Citations (Scopus)
17 Citations (Scopus)
6 Citations (Scopus)

High-Throughput Study of Compositions and Optical Properties in Heavily Co-Doped Silicon Nanoparticles

Somogyi, B., Derian, R., Štich, I. & Gali, A., dec. 14 2017, In : Journal of Physical Chemistry C. 121, 49, p. 27741-27750 10 p.

Research output: Article

8 Citations (Scopus)
3 Citations (Scopus)

Identification of Si-vacancy related room-temperature qubits in 4H silicon carbide

Ivády, V., Davidsson, J., Son, N. T., Ohshima, T., Abrikosov, I. A. & Gali, A., okt. 27 2017, In : Physical Review B. 96, 16, 161114.

Research output: Article

24 Citations (Scopus)

Nitrogen-Terminated Diamond (111) Surface for Room-Temperature Quantum Sensing and Simulation

Chou, J. P., Retzker, A. & Gali, A., ápr. 12 2017, In : Nano Letters. 17, 4, p. 2294-2298 5 p.

Research output: Article

26 Citations (Scopus)

Nitrogen-vacancy diamond sensor: Novel diamond surfaces from ab initio simulations

Chou, J. P. & Gali, A., szept. 1 2017, In : MRS Communications. 7, 3, p. 551-562 12 p.

Research output: Article

4 Citations (Scopus)

Optical Gaps in Pristine and Heavily Doped Silicon Nanocrystals: DFT versus Quantum Monte Carlo Benchmarks

Derian, R., Tokár, K., Somogyi, B., Gali, A. & Štich, I., dec. 12 2017, In : Journal of Chemical Theory and Computation. 13, 12, p. 6061-6067 7 p.

Research output: Article

5 Citations (Scopus)

Photoluminescence excitation spectroscopy of SiV- and GeV- color center in diamond

Häußler, S., Thiering, G., Dietrich, A., Waasem, N., Teraji, T., Isoya, J., Iwasaki, T., Hatano, M., Jelezko, F., Gali, A. & Kubanek, A., jún. 2017, In : New Journal of Physics. 19, 6, 063036.

Research output: Article

28 Citations (Scopus)