• 7205 Citations
  • 42 h-Index
19952020

Research output per year

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Research Output

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Conference contribution

Ab initio theory of Si-vacancy quantum Bits in 4H and 6H-SiC

Ivády, V., Davidsson, J., Son, N. T., Ohshima, T., Abrikosov, I. A. & Gali, A., jan. 1 2018, Silicon Carbide and Related Materials, 2017. Stahlbush, R., Neudeck, P., Bhalla, A., Devaty, R. P., Dudley, M. & Lelis, A. (eds.). Trans Tech Publications Ltd, p. 895-900 6 p. (Materials Science Forum; vol. 924 MSF).

Research output: Conference contribution

1 Citation (Scopus)

A Cause for SiC/SiO2 Interface States: The Site Selection of Oxygen in SiC

Deák, P., Gali, A., Hajnal, Z., Frauenheim, T., Son, N. T., Janzén, E., Choyke, W. J. & Ordejón, P., 2003, Materials Science Forum. Bergman, P. & Janzén, E. (eds.). Trans Tech Publications Ltd, p. 535-538 4 p. (Materials Science Forum; vol. 433-436).

Research output: Conference contribution

11 Citations (Scopus)

A room temperature single photon source in silicon carbide

Castelletto, S., Johnson, B. C., Ivády, V., Stavrias, N., Umeda, T., Gali, A. & Ohshima, T., jan. 1 2013, 2013 Conference on Lasers and Electro-Optics, CLEO 2013. IEEE Computer Society, 6834243. (2013 Conference on Lasers and Electro-Optics, CLEO 2013).

Research output: Conference contribution

A Shallow Acceptor Complex in 4H-SiC: AlSiNcAl Si

Deák, P., Aradi, B., Gali, A., Gerstmann, U. & Choyke, W. J., jan. 1 2003, Materials Science Forum. Bergman, P. & Janzén, E. (eds.). Trans Tech Publications Ltd, p. 523-526 4 p. (Materials Science Forum; vol. 433-436).

Research output: Conference contribution

6 Citations (Scopus)

A theoretical study on aluminium-related defects in SiC

Hornos, T., Gali, A., Son, N. T. & Janzén, E., 2007, Silicon Carbide and Related Materials 2006 - ECSCRM 20006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials. Wright, N., Johnson, C. M., Vassilevski, K., Nikitina, I. & Horsfall, A. (eds.). Trans Tech Publications Ltd, p. 445-448 4 p. (Materials Science Forum; vol. 556-557).

Research output: Conference contribution

A theoretical study on aluminium-related defects in SiC

Hornos, T., Gali, A., Son, N. T. & Janzén, E., jan. 1 2007, Silicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials. Wright, N., Johnson, C. M., Vassilevski, K., Nikitina, I. & Horsfall, A. (eds.). Trans Tech Publications Ltd, p. 445-448 4 p. (Materials Science Forum; vol. 556-557).

Research output: Conference contribution

4 Citations (Scopus)

A theoretical study on doping of phosphorus in chemical vapor deposited SiC layers

Hornos, T., Gali, A., Devaty, R. P. & Choyke, W. J., jan. 1 2006, Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. Trans Tech Publications Ltd, p. 605-608 4 p. (Materials Science Forum; vol. 527-529, no. PART 1).

Research output: Conference contribution

2 Citations (Scopus)

Calculation of Hyperfine Constants of Defects in 4H-SiC

Gali, A., Deák, P., Son, N. T., Janzén, E., Von Bardeleben, H. J. & Monge, J. L., jan. 1 2003, Materials Science Forum. Bergman, P. & Janzén, E. (eds.). Trans Tech Publications Ltd, p. 511-514 4 p. (Materials Science Forum; vol. 433-436).

Research output: Conference contribution

15 Citations (Scopus)

Comparative study of Si and Ge nanoparticles with exotic core phases for solar energy conversion

Wippermann, S., Voros, M., Gali, A., Galli, G. & Zimanyi, G., jan. 1 2013, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., p. 989-992 4 p. 6744307. (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Conference contribution

Defects identified in SiC and their implications

Bockstedte, M., Marini, A., Gali, A., Pankratov, O. & Rubio, A., jan. 1 2009, Silicon Carbide and Related Materials 2007. Fuyuki, T., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Suzuki, A. (eds.). Trans Tech Publications Ltd, p. 285-290 6 p. (Materials Science Forum; vol. 600-603).

Research output: Conference contribution

3 Citations (Scopus)

Defects in SiC: Theory

Gali, A., ápr. 28 2011, Silicon Carbide and Related Materials 2010. p. 225-232 8 p. (Materials Science Forum; vol. 679-680).

Research output: Conference contribution

Defects introduced by electron-irradiation at low temperatures in SiC

Son, N. T., Isoya, J., Morishita, N., Ohshima, T., Itoh, H., Gali, A. & Janzén, E., dec. 1 2009, Silicon Carbide and Related Materials 2008: ECSCRM 2008. p. 377-380 4 p. (Materials Science Forum; vol. 615 617).

Research output: Conference contribution

2 Citations (Scopus)

Density functional theory on NV center in 4H SiC

Csóré, A. & Gali, jan. 1 2017, Silicon Carbide and Related Materials 2016. Zekentes, K., Zekentes, K., Vasilevskiy, K. V. & Frangis, N. (eds.). Trans Tech Publications Ltd, p. 269-274 6 p. (Materials Science Forum; vol. 897 MSF).

Research output: Conference contribution

1 Citation (Scopus)

Divacancy and its identification: Theory

Gali, A., Bockstedte, M., Son, N. T., Umeda, T., Isoya, J. & Janzén, E., jan. 1 2006, Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. Trans Tech Publications Ltd, p. 523-526 4 p. (Materials Science Forum; vol. 527-529, no. PART 1).

Research output: Conference contribution

11 Citations (Scopus)

Divacancy model for P6/P7 centers in 4H- and 6H-SiC

Son, N. T., Umeda, T., Isoya, J., Gali, A., Bockstedte, M., Magnusson, B., Ellison, A., Morishita, N., Ohshima, T., Itoh, H. & Janzén, E., dec. 1 2006, Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. p. 527-530 4 p. (Materials Science Forum; vol. 527-529, no. PART 1).

Research output: Conference contribution

7 Citations (Scopus)

Electronic configuration of tungsten in 4H-, 6H-, and 15R-SiC

Gällström, A., Magnusson, B., Beyer, F. C., Gali, A., Son, N. T., Leone, S., Ivanov, I. G., Henry, A., Hemmingsson, C. G. & Janzén, E., máj. 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 211-216 6 p. (Materials Science Forum; vol. 717-720).

Research output: Conference contribution

Engineering single defects in silicon carbide bulk, nanostructures and devices

Lohrmann, A., Johnson, B. C., Almutairi, A. F. M., Lau, D. W. M., Negri, M., Bosi, M., Gibson, B. C., McCallum, J. C., Gali, A., Ohshima, T. & Castelletto, S., jan. 1 2016, Silicon Carbide and Related Materials 2015. Roccaforte, F., Giannazzo, F., La Via, F., Nipoti, R., Crippa, D. & Saggio, M. (eds.). Trans Tech Publications Ltd, p. 312-317 6 p. (Materials Science Forum; vol. 858).

Research output: Conference contribution

2 Citations (Scopus)

Evidence for phosphorus on carbon and silicon sites in 6H and 4H SiC

Yan, F., Devaty, R. P., Choyke, W. J., Gali, A., Bhat, I. B. & Larkin, D. J., dec. 1 2006, Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. p. 585-588 4 p. (Materials Science Forum; vol. 527-529, no. PART 1).

Research output: Conference contribution

4 Citations (Scopus)

Evolution of defect and hydrogen-related low temperature photoluminescence spectra with annealing for hydrogen or helium implanted 6H SiC

Yan, F., Devaty, R. P., Choyke, W. J., Gali, A., Schmid, F., Pensl, G. & Wagner, G., dec. 1 2005, Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials. p. 493-496 4 p. (Materials Science Forum; vol. 483-485).

Research output: Conference contribution

1 Citation (Scopus)

Excitation properties of silicon vacancy in silicon carbide

Gali, A., máj. 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 255-258 4 p. (Materials Science Forum; vol. 717-720).

Research output: Conference contribution

2 Citations (Scopus)

Exotic phase Si nanoparticles and Si-ZnS nanocomposites: New paradigms to improve the efficiency of MEG solar cells

Voros, M., Wippermann, S., Gali, A., Gygi, F., Zimanyi, G. & Galli, G., okt. 15 2014, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., p. 3432-3434 3 p. 6925670. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Conference contribution

Experiment and theory of the anharmonic effect in C-H and C-D vibrations of SiC

Choyke, W. J., Devaty, R. P., Bai, S., Gali, A., Deák, P. & Pensl, G., jan. 1 2002, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 585-588 4 p. (Materials Science Forum; vol. 389-393).

Research output: Conference contribution

3 Citations (Scopus)

First principles investigation of divacancy in SiC polytypes for solid state qubit application

Szász, K., Ivády, V., Janzén, E. & Gali, A., jan. 1 2014, Silicon Carbide and Related Materials 2013. Trans Tech Publications Ltd, p. 499-502 4 p. (Materials Science Forum; vol. 778-780).

Research output: Conference contribution

4 Citations (Scopus)

First-principles study on photoluminescence quenching of divacancy in 4H SIC

Csóré, A., Magnusson, B., Son, N. T., Gällström, A., Ohshima, T., Ivanov, I. G. & Gali, A., jan. 1 2019, Silicon Carbide and Related Materials, 2018. Gammon, P. M., Shah, V. A., McMahon, R. A., Jennings, M. R., Vavasour, O., Mawby, P. A. & Padfield, F. (eds.). Trans Tech Publications Ltd, p. 714-717 4 p. (Materials Science Forum; vol. 963 MSF).

Research output: Conference contribution

Group theoretical analysis of nitrogen-vacancy center's energy levels and selection rules

Maze, J. R., Gali, A., Togan, E., Chu, Y., Trifonov, A., Kaxiras, E. & Lukin, M. D., okt. 3 2011, Diamond Electronics and Bioelectronics - Fundamentals to Applications IV. p. 95-101 7 p. (Materials Research Society Symposium Proceedings; vol. 1282).

Research output: Conference contribution

Identification of niobium in 4H-SiC by EPR and ab INITIO studies

Son, N. T., Ivády, V., Gali, A., Gällström, A., Leone, S., Kordina, O. & Janzén, E., máj. 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 217-220 4 p. (Materials Science Forum; vol. 717-720).

Research output: Conference contribution

3 Citations (Scopus)

Identification of the negative carbon vacancy at quasi-cubic site in 4H-SIC by EPR and theoretical calculations

Trinh, X. T., Szász, K., Hornos, T., Kawahara, K., Suda, J., Kimoto, T., Gali, Á., Janzén, E. & Son, N. T., jan. 1 2014, Silicon Carbide and Related Materials 2013. Trans Tech Publications Ltd, p. 285-288 4 p. (Materials Science Forum; vol. 778-780).

Research output: Conference contribution

Identification of the negative di-carbon antisite defect in n-type 4H-SiC

Gali, A., Umeda, T., Janzén, E., Morishita, N., Ohshima, T. & Isoya, J., dec. 1 2009, Silicon Carbide and Related Materials 2008: ECSCRM 2008. p. 361-364 4 p. (Materials Science Forum; vol. 615 617).

Research output: Conference contribution

Influence of oxygen on the absorption of silicon carbide nanoparticles

Vörös, M., Deák, P., Frauenheim, T. & Gali, A., ápr. 28 2011, Silicon Carbide and Related Materials 2010. p. 520-523 4 p. (Materials Science Forum; vol. 679-680).

Research output: Conference contribution

4 Citations (Scopus)

Introducing color centers to silicon carbide nanocrystals for in vivo biomarker applications: A first principles study

Somogyi, B., Zólyomi, V. & Gali, A., febr. 25 2013, Silicon Carbide and Related Materials 2012, ECSCRM 2012. p. 641-644 4 p. (Materials Science Forum; vol. 740-742).

Research output: Conference contribution

Investigation of Mo defects in 4H-SiC by means of density functional theory

Csóré, A., Gällström, A., Janzén, E. & Gali, A., jan. 1 2016, Silicon Carbide and Related Materials 2015. Roccaforte, F., Giannazzo, F., La Via, F., Nipoti, R., Crippa, D. & Saggio, M. (eds.). Trans Tech Publications Ltd, p. 261-264 4 p. (Materials Science Forum; vol. 858).

Research output: Conference contribution

2 Citations (Scopus)

Large-scale electronic structure calculations of vacancies in 4H-SiC using the Heyd-Scuseria-Ernzerhof screened hybrid density functional

Hornos, T., Gali, Á. & Svensson, B. G., ápr. 28 2011, Silicon Carbide and Related Materials 2010. p. 261-264 4 p. (Materials Science Forum; vol. 679-680).

Research output: Conference contribution

69 Citations (Scopus)

Local thermal expansion and the C-C stretch vibration of the dicarbon antisite in 4H SiC

Devaty, R. P., Yan, F., Choyke, W. J., Gali, A., Kimoto, T. & Ohshima, T., máj. 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 263-266 4 p. (Materials Science Forum; vol. 717-720).

Research output: Conference contribution

1 Citation (Scopus)

New lines and issues associated with deep defect spectra in electron, proton and 4He ion irradiated 4H SiC

Yan, F., Devaty, R. P., Choyke, W. J., Kimoto, T., Ohshima, T., Pensl, G. & Gali, A., jan. 1 2010, Silicon Carbide and Related Materials 2009: ICSCRM 2009. Trans Tech Publications Ltd, p. 411-414 4 p. (Materials Science Forum; vol. 645-648).

Research output: Conference contribution

5 Citations (Scopus)

Optical nuclear spin polarization of divacancies in SiC

Ivády, V., Szász, K., Falk, A. L., Klimov, P. V., Christle, D. J., Koehl, W. F., Janzén, E., Abrikosov, I. A., Awschalom, D. D. & Gali, A., jan. 1 2016, Silicon Carbide and Related Materials 2015. Roccaforte, F., Giannazzo, F., La Via, F., Nipoti, R., Crippa, D. & Saggio, M. (eds.). Trans Tech Publications Ltd, p. 287-290 4 p. (Materials Science Forum; vol. 858).

Research output: Conference contribution

Optical properties of the niobium centre in 4H, 6H, and 15R SiC

Ivanov, I. G., Gällström, A., Leone, S., Kordina, O., Son, N. T., Henry, A., Ivády, V., Gali, A. & Janzén, E., febr. 25 2013, Silicon Carbide and Related Materials 2012, ECSCRM 2012. p. 405-408 4 p. (Materials Science Forum; vol. 740-742).

Research output: Conference contribution

1 Citation (Scopus)

Point defects and their aggregation in silicon carbide

Gali, A., Hornos, T., Bockstedte, M. & Frauenheim, T., jan. 1 2007, Silicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials. Wright, N., Johnson, C. M., Vassilevski, K., Nikitina, I. & Horsfall, A. (eds.). Trans Tech Publications Ltd, p. 439-444 6 p. (Materials Science Forum; vol. 556-557).

Research output: Conference contribution

1 Citation (Scopus)

Point defects and their aggregation in silicon carbide

Gali, A., Hornos, T., Bockstedte, M. & Frauenheim, T., 2007, Silicon Carbide and Related Materials 2006 - ECSCRM 20006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials. Wright, N., Johnson, C. M., Vassilevski, K., Nikitina, I. & Horsfall, A. (eds.). Trans Tech Publications Ltd, p. 439-444 6 p. (Materials Science Forum; vol. 556-557).

Research output: Conference contribution

Point defects in SiC

Gali, Á., Bockstedte, M., Son, N. T. & Janzén, E., nov. 17 2008, Materials Research Society Symposium Proceedings - Silicon Carbide 2008 - Materials, Processing and Devices. p. 65-76 12 p. (Materials Research Society Symposium Proceedings; vol. 1069).

Research output: Conference contribution

2 Citations (Scopus)

Preparation of small silicon carbide quantum dots by wet chemical etching

Beke, D., Szekrényes, Z., Balogh, I., Veres, M., Fazakas, É., Varga, L. K., Czigány, Z., Kamarás, K. & Gali, A., dec. 1 2012, Nanomedicine for Molecular Imaging and Therapy. p. 19-24 6 p. (Materials Research Society Symposium Proceedings; vol. 1468).

Research output: Conference contribution

Quantum mechanical studies of boron clustering in silicon

Deák, P., Gali, A. & Pichler, P., dec. 1 2006, High Performance Computing in Science and Engineering 2005 - Transactions of the High Performance Computing Center Stuttgart, HLRS 2005. p. 257-268 12 p. (High Performance Computing in Science and Engineering 2005 - Transactions of the High Performance Computing Center Stuttgart, HLRS 2005).

Research output: Conference contribution

Shallow P donors in 3C-, AH-, and 6H-SiC

Isoya, J., Katagiri, M., Umeda, T., Son, N. T., Henry, A., Gali, A., Morishita, N., Ohshima, T., Itoh, H. & Janzén, E., dec. 1 2006, Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. p. 593-596 4 p. (Materials Science Forum; vol. 527-529, no. PART 1).

Research output: Conference contribution

3 Citations (Scopus)

Signature of the negative carbon vacancy-antisite complex

Bockstedte, M., Gali, A., Umeda, T., Son, N. T., Isoya, J. & Janzén, E., jan. 1 2006, Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. Trans Tech Publications Ltd, p. 539-542 4 p. (Materials Science Forum; vol. 527-529, no. PART 1).

Research output: Conference contribution

6 Citations (Scopus)

Silicon carbide: A playground for ID-modulation electronics

Deák, P., Buruzs, A., Gali, A., Frauenheim, T. & Choyke, W. J., dec. 1 2006, Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. p. 355-358 4 p. (Materials Science Forum; vol. 527-529, no. PART 1).

Research output: Conference contribution

The absorption of diamondoids from time-dependent density functional calculations

Vörös, M., Demjén, T. & Gali, A., dec. 23 2011, Computational Semiconductor Materials Science. p. 23-28 6 p. (Materials Research Society Symposium Proceedings; vol. 1370).

Research output: Conference contribution

The mechanism of interface state passivation by no

Deák, P., Hornos, T., Thill, C., Knaup, J., Gali, A. & Frauenheim, T., jan. 1 2007, Silicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials. Wright, N., Johnson, C. M., Vassilevski, K., Nikitina, I. & Horsfall, A. (eds.). Trans Tech Publications Ltd, p. 541-544 4 p. (Materials Science Forum; vol. 556-557).

Research output: Conference contribution

3 Citations (Scopus)

The mechanism of interface state passivation by NO

Deák, P., Hornos, T., Thill, C., Knaup, J., Gali, A. & Frauenheim, T., 2007, Silicon Carbide and Related Materials 2006 - ECSCRM 20006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials. Wright, N., Johnson, C. M., Vassilevski, K., Nikitina, I. & Horsfall, A. (eds.). Trans Tech Publications Ltd, p. 541-544 4 p. (Materials Science Forum; vol. 556-557).

Research output: Conference contribution

Theoretical investigation of the single photon emitter carbon antisitevacancy pair in 4H-SiC

Ivády, V., Abrikosov, I., Janzén, E. & Gali, A., jan. 1 2014, Silicon Carbide and Related Materials 2013. Trans Tech Publications Ltd, p. 495-498 4 p. (Materials Science Forum; vol. 778-780).

Research output: Conference contribution

Theoretical investigations of complexes of p-type dopants and carbon interstitial in SiC: Bistable, negative-U defects

Gali, A., Hornos, T., Deák, P., Son, N. T., Janzén, E. & Choyke, W. J., dec. 1 2005, Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials. p. 519-522 4 p. (Materials Science Forum; vol. 483-485).

Research output: Conference contribution

4 Citations (Scopus)

Theoretical Study of Antisite Aggregation in α-SiC

Rauls, E., Gali, A., Deák, P. & Frauenheim, T., jan. 1 2003, Materials Science Forum. Bergman, P. & Janzén, E. (eds.). Trans Tech Publications Ltd, p. 491-494 4 p. (Materials Science Forum; vol. 433-436).

Research output: Conference contribution

3 Citations (Scopus)