ZnO layers deposited by atomic layer deposition

B. Pécz, Zs Baji, Z. Lábadi, A. Kovács

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The structure of 40 nm thick epitaxial ZnO layers grown on single crystalline sapphire and GaN substrates by atomic layer deposition has been studied using transmission electron microscopy. The growth is carried out between 150°C and 300°C without any buffer layer using di-ethyl zinc and water precursors. The ZnO layer on sapphire is found to be polycrystalline, which is probably due to the large misfit (∼15 %) and the relatively low deposition temperature. However, the small misfit (∼1.8 %) between the ZnO layer that is deposited on GaN at 300°C resulted in a high quality single crystalline layer.

Original languageEnglish
Article number012015
JournalJournal of Physics: Conference Series
Volume471
Issue number1
DOIs
Publication statusPublished - 2013

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atomic layer epitaxy
sapphire
buffers
zinc
transmission electron microscopy
water
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

ZnO layers deposited by atomic layer deposition. / Pécz, B.; Baji, Zs; Lábadi, Z.; Kovács, A.

In: Journal of Physics: Conference Series, Vol. 471, No. 1, 012015, 2013.

Research output: Contribution to journalArticle

Pécz, B. ; Baji, Zs ; Lábadi, Z. ; Kovács, A. / ZnO layers deposited by atomic layer deposition. In: Journal of Physics: Conference Series. 2013 ; Vol. 471, No. 1.
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