XTEM, ellipsometric and ARXPS study of a-SiOx and a-Ge thin films on silicon substrates

S. Hucek, J. Zemek, G. Radnóczi, P. Široký

Research output: Contribution to journalArticle

Abstract

Cross sectional transmission electron microscopy (XTEM), ellipsometry and angularresolved X-ray induced photoelectron spectroscopy (ARXPS) are used for the thin films thickness determination of a-SiOx/a-Ge/Si (111) structures. The ARXPS data are evaluated within a flat, uniform and layered model neglecting or including the electron elastic scattering processes.

Original languageEnglish
Pages (from-to)245-253
Number of pages9
JournalCzechoslovak Journal of Physics
Volume44
Issue number3
DOIs
Publication statusPublished - Mar 1994

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photoelectron spectroscopy
silicon
thin films
ellipsometry
elastic scattering
electron scattering
x rays
film thickness
transmission electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

XTEM, ellipsometric and ARXPS study of a-SiOx and a-Ge thin films on silicon substrates. / Hucek, S.; Zemek, J.; Radnóczi, G.; Široký, P.

In: Czechoslovak Journal of Physics, Vol. 44, No. 3, 03.1994, p. 245-253.

Research output: Contribution to journalArticle

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