XPS investigation of Pt-Si interfaces formed during heat treatments in different (H2, O2) atmospheres

L. Kövér, J. Tóth, L. Dávid

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Surface and interface structures of PtSi samples were analysed by means of XPS depth profiling by using sequential Ar ion sputtering. Pt layers of 50 nm thickness were evaporated onto n-type Si wafers, then treated at temperatures in the region of 450-600°C in H2 or O2 atmospheres for 30-45 min. In the case of samples treated in O2, silicon can be identified in oxidized form at the Ptsilicide interfaces contrary to the samples treated in H2, where this interface is vanishing. In all cases SiO2 is found to be present in the uppermost layer of the samples.

Original languageEnglish
Pages (from-to)125-127
Number of pages3
JournalVacuum
Volume37
Issue number1-2
DOIs
Publication statusPublished - 1987

Fingerprint

Depth profiling
Silicon
Sputtering
heat treatment
X ray photoelectron spectroscopy
Heat treatment
Ions
atmospheres
Temperature
sputtering
wafers
silicon
ions
temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

XPS investigation of Pt-Si interfaces formed during heat treatments in different (H2, O2) atmospheres. / Kövér, L.; Tóth, J.; Dávid, L.

In: Vacuum, Vol. 37, No. 1-2, 1987, p. 125-127.

Research output: Contribution to journalArticle

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