X-ray/atomic force microscopy study of the temperature-dependent multilayer structure of PTCDI-C8 films on SiO2

Tobias N. Krauss, Esther Barrena, G. De OteyzaDimas, Xue N. Zhang, János Major, Volker Dehm, Frank Würthner, Helmut Dosch

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30 Citations (Scopus)

Abstract

Combining atomic force microscopy, X-ray specular reflection, and grazing incidence X-ray diffraction experiments provides a thorough characterization of the structural properties of PTCDI-C8 films on native silicon dioxide as a function of both growth and post-annealing temperatures. We disclose that monomolecular islands and terraces are polycrystalline with lateral sizes of only ̃280 Å. While the lateral size of the crystallites remains unaffected by an increase of the growth temperature, the ordering along the surface normal is greatly enhanced, thereby reducing the density of topographical grain boundaries. Similarly, optimal post-annealing temperatures cause a better vertical ordering of the multilayer. From a detailed analysis of the X-ray reflectivity as obtained for the best ordered film, we provide accurate information on the vertical structure in the thin film and determine the tilt of the perylene cores.

Original languageEnglish
Pages (from-to)4502-4506
Number of pages5
JournalJournal of Physical Chemistry C
Volume113
Issue number11
DOIs
Publication statusPublished - Mar 19 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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    Krauss, T. N., Barrena, E., De OteyzaDimas, G., Zhang, X. N., Major, J., Dehm, V., Würthner, F., & Dosch, H. (2009). X-ray/atomic force microscopy study of the temperature-dependent multilayer structure of PTCDI-C8 films on SiO2 Journal of Physical Chemistry C, 113(11), 4502-4506. https://doi.org/10.1021/jp808037w