X-ray Raman scattering at the L edges of elemental Na, Si, and the N edge of Ba in Ba8Si46

C. Sternemann, J. A. Soininen, S. Huotari, G. Vankó, M. Volmer, R. A. Secco, J. S. Tse, M. Tolan

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

X-ray Raman spectra of the Na and Si LII,III edges have been measured for different momentum transfers at beamline ID16 of European Synchrotron Radiation Facility using the inelastic x-ray-scattering setup with an energy resolution of about 1eV. The momentum transfer dependence of these spectra is analyzed using a first-principles method that takes into account the particle-hole interaction as well as the final states self-energy effects. As an example for application of x-ray Raman scattering to higher Z elements the Ba N edge of a sample of Ba-doped Si clathrate Ba8Si46 is presented. The potential of x-ray Raman scattering to measure L, M, and N edges is emphasized and discussed along with the future perspectives of different theoretical approaches.

Original languageEnglish
Article number035104
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number3
DOIs
Publication statusPublished - Jul 15 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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