X-ray Raman spectra of the Na and Si LII,III edges have been measured for different momentum transfers at beamline ID16 of European Synchrotron Radiation Facility using the inelastic x-ray-scattering setup with an energy resolution of about 1eV. The momentum transfer dependence of these spectra is analyzed using a first-principles method that takes into account the particle-hole interaction as well as the final states self-energy effects. As an example for application of x-ray Raman scattering to higher Z elements the Ba N edge of a sample of Ba-doped Si clathrate Ba8Si46 is presented. The potential of x-ray Raman scattering to measure L, M, and N edges is emphasized and discussed along with the future perspectives of different theoretical approaches.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - Jul 15 2005|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics