X-ray photoelectron spectroscopy and optical studies of Bi12(GaxBi1-x)O20-δ and Bi12(ZnxBi1-x)O20-δ single crystals

C. Zaldo, C. Coya, J. L G Fierro, K. Polgár, L. Kovács, Zs Szaller

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Bi12(MxBi1-x)O20-δ transparent crystals, where M = Ga (x = 0.63 - 0.72) or M = Zn (x = 0.57), have been grown by Czochralski technique. A change in the bonding conditions of a minor fraction of bismuth in the sample surface has been confirmed by X-ray photoelectron spectroscopy. This has been attributed to the surface enhanced presence of bismuth in tetrahedral lattice positions (BiM). It is suggested that defect centers related with BiM cations are responsible for a pre-edge absorption observed for M = Ga. Excitation in this band produce a photoluminescence emission peaking at 608 nm, observed at 15K. Infrared absorption bands at 636 cm-1 for M = Ga and 635 cm-1 for M = Zn were detected and attributed to BiM-O vibrations.

Original languageEnglish
Pages (from-to)1667-1672
Number of pages6
JournalJournal of Physics and Chemistry of Solids
Volume57
Issue number11
DOIs
Publication statusPublished - Nov 1996

Fingerprint

Bismuth
bismuth
X ray photoelectron spectroscopy
photoelectron spectroscopy
Single crystals
single crystals
Infrared absorption
infrared absorption
Cations
Absorption spectra
Photoluminescence
x rays
Positive ions
absorption spectra
photoluminescence
cations
vibration
Defects
Crystals
defects

Keywords

  • A. optical materials
  • B. crystal growth
  • C. photoelectron spectroscopy
  • D. defects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

X-ray photoelectron spectroscopy and optical studies of Bi12(GaxBi1-x)O20-δ and Bi12(ZnxBi1-x)O20-δ single crystals. / Zaldo, C.; Coya, C.; Fierro, J. L G; Polgár, K.; Kovács, L.; Szaller, Zs.

In: Journal of Physics and Chemistry of Solids, Vol. 57, No. 11, 11.1996, p. 1667-1672.

Research output: Contribution to journalArticle

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abstract = "Bi12(MxBi1-x)O20-δ transparent crystals, where M = Ga (x = 0.63 - 0.72) or M = Zn (x = 0.57), have been grown by Czochralski technique. A change in the bonding conditions of a minor fraction of bismuth in the sample surface has been confirmed by X-ray photoelectron spectroscopy. This has been attributed to the surface enhanced presence of bismuth in tetrahedral lattice positions (BiM). It is suggested that defect centers related with BiM cations are responsible for a pre-edge absorption observed for M = Ga. Excitation in this band produce a photoluminescence emission peaking at 608 nm, observed at 15K. Infrared absorption bands at 636 cm-1 for M = Ga and 635 cm-1 for M = Zn were detected and attributed to BiM-O vibrations.",
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T1 - X-ray photoelectron spectroscopy and optical studies of Bi12(GaxBi1-x)O20-δ and Bi12(ZnxBi1-x)O20-δ single crystals

AU - Zaldo, C.

AU - Coya, C.

AU - Fierro, J. L G

AU - Polgár, K.

AU - Kovács, L.

AU - Szaller, Zs

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N2 - Bi12(MxBi1-x)O20-δ transparent crystals, where M = Ga (x = 0.63 - 0.72) or M = Zn (x = 0.57), have been grown by Czochralski technique. A change in the bonding conditions of a minor fraction of bismuth in the sample surface has been confirmed by X-ray photoelectron spectroscopy. This has been attributed to the surface enhanced presence of bismuth in tetrahedral lattice positions (BiM). It is suggested that defect centers related with BiM cations are responsible for a pre-edge absorption observed for M = Ga. Excitation in this band produce a photoluminescence emission peaking at 608 nm, observed at 15K. Infrared absorption bands at 636 cm-1 for M = Ga and 635 cm-1 for M = Zn were detected and attributed to BiM-O vibrations.

AB - Bi12(MxBi1-x)O20-δ transparent crystals, where M = Ga (x = 0.63 - 0.72) or M = Zn (x = 0.57), have been grown by Czochralski technique. A change in the bonding conditions of a minor fraction of bismuth in the sample surface has been confirmed by X-ray photoelectron spectroscopy. This has been attributed to the surface enhanced presence of bismuth in tetrahedral lattice positions (BiM). It is suggested that defect centers related with BiM cations are responsible for a pre-edge absorption observed for M = Ga. Excitation in this band produce a photoluminescence emission peaking at 608 nm, observed at 15K. Infrared absorption bands at 636 cm-1 for M = Ga and 635 cm-1 for M = Zn were detected and attributed to BiM-O vibrations.

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KW - B. crystal growth

KW - C. photoelectron spectroscopy

KW - D. defects

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