X-ray investigation of Ti-Si thin films prepared by solid phase reaction

E. Zsoldos, G. Pető, V. Schiller, G. Vályi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Ti-Si films were prepared by evaporation of a titanium film onto Si〈111〉, Si〈100〉 and polycrystalline silicon (poly-Si) surfaces with subsequent annealing in vacuum at various temperatures. X-ray diffraction was used to detect the phases formed by solid phase reaction. The X-ray reflection data correspond to TiSi2 when the sample was heat treated at 750 and 950°C, and to TiSi2 plus TiSi after annealing at 850°C. These effects were detected for Ti/Si〈111〉 but not for a Ti/poly-Si multilayer.

Original languageEnglish
Pages (from-to)243-249
Number of pages7
JournalThin Solid Films
Volume137
Issue number2
DOIs
Publication statusPublished - Mar 15 1986

Fingerprint

Polysilicon
solid phases
Annealing
X rays
Thin films
annealing
silicon
thin films
Titanium
Multilayers
Evaporation
x rays
titanium
evaporation
Vacuum
X ray diffraction
heat
vacuum
diffraction
Temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

X-ray investigation of Ti-Si thin films prepared by solid phase reaction. / Zsoldos, E.; Pető, G.; Schiller, V.; Vályi, G.

In: Thin Solid Films, Vol. 137, No. 2, 15.03.1986, p. 243-249.

Research output: Contribution to journalArticle

Zsoldos, E. ; Pető, G. ; Schiller, V. ; Vályi, G. / X-ray investigation of Ti-Si thin films prepared by solid phase reaction. In: Thin Solid Films. 1986 ; Vol. 137, No. 2. pp. 243-249.
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