Wedge etching by anodic oxidation and determination of shallow boron profile by ion beam analysis

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1 Citation (Scopus)

Abstract

Shallow boron implantation is a widely used step in the Si technology. Boron being a light element, standard RBS and channeling is hardly used for investigating its depth distribution and lattice location after implantation and subsequent annealing. An old idea, the pulled anodic oxidation is applied to create bevelled sample surface in order to explore the implanted boron profile. Detailed description of the special sample preparation method is given. RBS and channeling studies in combination with the 11B(p,α)8Be nuclear reaction at around 660 keV were used to measure the total boron concentration step-by-step both on random direction and channeled samples. Boron profiles extracted from step-by-step nuclear reaction measurements is presented.

Original languageEnglish
Pages (from-to)1434-1438
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume266
Issue number8
DOIs
Publication statusPublished - Apr 2008

Fingerprint

Boron
Anodic oxidation
wedges
Ion beams
Etching
boron
ion beams
etching
oxidation
profiles
Nuclear reactions
nuclear reactions
implantation
light elements
Annealing
preparation
annealing

Keywords

  • Anodic oxidation
  • Nuclear reaction analysis
  • Shallow boron implant
  • Wedge etching

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

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abstract = "Shallow boron implantation is a widely used step in the Si technology. Boron being a light element, standard RBS and channeling is hardly used for investigating its depth distribution and lattice location after implantation and subsequent annealing. An old idea, the pulled anodic oxidation is applied to create bevelled sample surface in order to explore the implanted boron profile. Detailed description of the special sample preparation method is given. RBS and channeling studies in combination with the 11B(p,α)8Be nuclear reaction at around 660 keV were used to measure the total boron concentration step-by-step both on random direction and channeled samples. Boron profiles extracted from step-by-step nuclear reaction measurements is presented.",
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AU - Gyulai, J.

AU - Battistig, G.

AU - Lohner, T.

AU - Hajnal, Z.

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AB - Shallow boron implantation is a widely used step in the Si technology. Boron being a light element, standard RBS and channeling is hardly used for investigating its depth distribution and lattice location after implantation and subsequent annealing. An old idea, the pulled anodic oxidation is applied to create bevelled sample surface in order to explore the implanted boron profile. Detailed description of the special sample preparation method is given. RBS and channeling studies in combination with the 11B(p,α)8Be nuclear reaction at around 660 keV were used to measure the total boron concentration step-by-step both on random direction and channeled samples. Boron profiles extracted from step-by-step nuclear reaction measurements is presented.

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