Weak bonds and atomic charge distribution in hydrogenated amorphous silicon

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Abstract

Semiempirical molecular orbital calculations were carried out in order to estimate static charge fluctuation in a-Si:H. We derived an empirical formula determing Si-Si bond lengths as a function of atomic net charges. It was found that Si-Si bonds adjacent to Si-H bonds are longer, i.e. weaker, than others.

Original languageEnglish
Pages (from-to)295-298
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume137-138
Issue numberPART 1
DOIs
Publication statusPublished - 1991

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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