Weak bonds and atomic charge distribution in hydrogenated amorphous silicon

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Semiempirical molecular orbital calculations were carried out in order to estimate static charge fluctuation in a-Si:H. We derived an empirical formula determing Si-Si bond lengths as a function of atomic net charges. It was found that Si-Si bonds adjacent to Si-H bonds are longer, i.e. weaker, than others.

Original languageEnglish
Pages (from-to)295-298
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume137-138
Issue numberPART 1
DOIs
Publication statusPublished - 1991

Fingerprint

Orbital calculations
Charge distribution
Bond length
Molecular orbitals
Amorphous silicon
charge distribution
amorphous silicon
molecular orbitals
estimates

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Weak bonds and atomic charge distribution in hydrogenated amorphous silicon. / Kugler, S.; Náray-Szabó, G.

In: Journal of Non-Crystalline Solids, Vol. 137-138, No. PART 1, 1991, p. 295-298.

Research output: Contribution to journalArticle

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