Weak antilocalization and quantum oscillations of surface states in topologically nontrivial DyPdBi(110)Half Heusler alloy

Vishal Bhardwaj, Satyendra Prakash Pal, Lajos K. Varga, Monika Tomar, Vinay Gupta, Ratnamala Chatterjee

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Abstract

Recently, a number of ternary half-Heusler compounds have been predicted independently by several research groups as candidates for 3D topological insulators. In this work, we report the observation of a two-dimensional (2D) weak antilocalization (WAL) effect, one of the hall-marks of topological surface states, and Shubnikov-de Hass (SdH) quantum oscillations in <110> oriented DyPdBi (DPB) thin films grown on MgO (100) substrates. The films prepared by pulsed laser deposition technique under the optimized conditions, showed a textured structure with (110) planes parallel to the (100) plane of MgO. The measured WAL effect follows the Hikami-Larkin-Nagaoka (HLN) model and the extracted values of phase coherence length (l) and α are ~420 nm and ~-0.52 respectively. The power law variation of l (~T-0.46) indicates the presence of the 2D surface states in DPB film. The Dirac nature of the surface states is further confirmed by Landau-level fan diagram analysis of SdH oscillations of the magneto-transport data. This analysis shows a finite Berry phase of 0.90π ± 0.16, reasonably close to the expected π value. Sheet Carrier density, ns ~ 2.56 × 1012 cm-2, calculated from the SdH oscillations (f SdH ~ 106 T) and Hall measurements agree well with each other. These findings demonstrate that the half Heusler DPB thin films (~15-20 nm) can be used as a suitable material for investigating the novel intrinsic quantum transport properties of surface Dirac fermions.

Original languageEnglish
Article number9931
JournalScientific reports
Volume8
Issue number1
DOIs
Publication statusPublished - Dec 1 2018

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