Weak antilocalization and quantum oscillations of surface states in topologically nontrivial DyPdBi(110)Half Heusler alloy

Vishal Bhardwaj, Satyendra Prakash Pal, L. Varga, Monika Tomar, Vinay Gupta, Ratnamala Chatterjee

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Abstract

Recently, a number of ternary half-Heusler compounds have been predicted independently by several research groups as candidates for 3D topological insulators. In this work, we report the observation of a two-dimensional (2D) weak antilocalization (WAL) effect, one of the hall-marks of topological surface states, and Shubnikov-de Hass (SdH) quantum oscillations in <110> oriented DyPdBi (DPB) thin films grown on MgO (100) substrates. The films prepared by pulsed laser deposition technique under the optimized conditions, showed a textured structure with (110) planes parallel to the (100) plane of MgO. The measured WAL effect follows the Hikami-Larkin-Nagaoka (HLN) model and the extracted values of phase coherence length (l) and α are ~420 nm and ~-0.52 respectively. The power law variation of l (~T-0.46) indicates the presence of the 2D surface states in DPB film. The Dirac nature of the surface states is further confirmed by Landau-level fan diagram analysis of SdH oscillations of the magneto-transport data. This analysis shows a finite Berry phase of 0.90π ± 0.16, reasonably close to the expected π value. Sheet Carrier density, ns ~ 2.56 × 1012 cm-2, calculated from the SdH oscillations (f SdH ~ 106 T) and Hall measurements agree well with each other. These findings demonstrate that the half Heusler DPB thin films (~15-20 nm) can be used as a suitable material for investigating the novel intrinsic quantum transport properties of surface Dirac fermions.

Original languageEnglish
Article number9931
JournalScientific Reports
Volume8
Issue number1
DOIs
Publication statusPublished - Dec 1 2018

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oscillations
phase coherence
thin films
fans
pulsed laser deposition
transport properties
fermions
diagrams
insulators

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Weak antilocalization and quantum oscillations of surface states in topologically nontrivial DyPdBi(110)Half Heusler alloy. / Bhardwaj, Vishal; Pal, Satyendra Prakash; Varga, L.; Tomar, Monika; Gupta, Vinay; Chatterjee, Ratnamala.

In: Scientific Reports, Vol. 8, No. 1, 9931, 01.12.2018.

Research output: Contribution to journalArticle

Bhardwaj, Vishal ; Pal, Satyendra Prakash ; Varga, L. ; Tomar, Monika ; Gupta, Vinay ; Chatterjee, Ratnamala. / Weak antilocalization and quantum oscillations of surface states in topologically nontrivial DyPdBi(110)Half Heusler alloy. In: Scientific Reports. 2018 ; Vol. 8, No. 1.
@article{18155df7e1404058bcaf9f3ebfea4c4a,
title = "Weak antilocalization and quantum oscillations of surface states in topologically nontrivial DyPdBi(110)Half Heusler alloy",
abstract = "Recently, a number of ternary half-Heusler compounds have been predicted independently by several research groups as candidates for 3D topological insulators. In this work, we report the observation of a two-dimensional (2D) weak antilocalization (WAL) effect, one of the hall-marks of topological surface states, and Shubnikov-de Hass (SdH) quantum oscillations in <110> oriented DyPdBi (DPB) thin films grown on MgO (100) substrates. The films prepared by pulsed laser deposition technique under the optimized conditions, showed a textured structure with (110) planes parallel to the (100) plane of MgO. The measured WAL effect follows the Hikami-Larkin-Nagaoka (HLN) model and the extracted values of phase coherence length (l) and α are ~420 nm and ~-0.52 respectively. The power law variation of l (~T-0.46) indicates the presence of the 2D surface states in DPB film. The Dirac nature of the surface states is further confirmed by Landau-level fan diagram analysis of SdH oscillations of the magneto-transport data. This analysis shows a finite Berry phase of 0.90π ± 0.16, reasonably close to the expected π value. Sheet Carrier density, ns ~ 2.56 × 1012 cm-2, calculated from the SdH oscillations (f SdH ~ 106 T) and Hall measurements agree well with each other. These findings demonstrate that the half Heusler DPB thin films (~15-20 nm) can be used as a suitable material for investigating the novel intrinsic quantum transport properties of surface Dirac fermions.",
author = "Vishal Bhardwaj and Pal, {Satyendra Prakash} and L. Varga and Monika Tomar and Vinay Gupta and Ratnamala Chatterjee",
year = "2018",
month = "12",
day = "1",
doi = "10.1038/s41598-018-28382-1",
language = "English",
volume = "8",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

TY - JOUR

T1 - Weak antilocalization and quantum oscillations of surface states in topologically nontrivial DyPdBi(110)Half Heusler alloy

AU - Bhardwaj, Vishal

AU - Pal, Satyendra Prakash

AU - Varga, L.

AU - Tomar, Monika

AU - Gupta, Vinay

AU - Chatterjee, Ratnamala

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Recently, a number of ternary half-Heusler compounds have been predicted independently by several research groups as candidates for 3D topological insulators. In this work, we report the observation of a two-dimensional (2D) weak antilocalization (WAL) effect, one of the hall-marks of topological surface states, and Shubnikov-de Hass (SdH) quantum oscillations in <110> oriented DyPdBi (DPB) thin films grown on MgO (100) substrates. The films prepared by pulsed laser deposition technique under the optimized conditions, showed a textured structure with (110) planes parallel to the (100) plane of MgO. The measured WAL effect follows the Hikami-Larkin-Nagaoka (HLN) model and the extracted values of phase coherence length (l) and α are ~420 nm and ~-0.52 respectively. The power law variation of l (~T-0.46) indicates the presence of the 2D surface states in DPB film. The Dirac nature of the surface states is further confirmed by Landau-level fan diagram analysis of SdH oscillations of the magneto-transport data. This analysis shows a finite Berry phase of 0.90π ± 0.16, reasonably close to the expected π value. Sheet Carrier density, ns ~ 2.56 × 1012 cm-2, calculated from the SdH oscillations (f SdH ~ 106 T) and Hall measurements agree well with each other. These findings demonstrate that the half Heusler DPB thin films (~15-20 nm) can be used as a suitable material for investigating the novel intrinsic quantum transport properties of surface Dirac fermions.

AB - Recently, a number of ternary half-Heusler compounds have been predicted independently by several research groups as candidates for 3D topological insulators. In this work, we report the observation of a two-dimensional (2D) weak antilocalization (WAL) effect, one of the hall-marks of topological surface states, and Shubnikov-de Hass (SdH) quantum oscillations in <110> oriented DyPdBi (DPB) thin films grown on MgO (100) substrates. The films prepared by pulsed laser deposition technique under the optimized conditions, showed a textured structure with (110) planes parallel to the (100) plane of MgO. The measured WAL effect follows the Hikami-Larkin-Nagaoka (HLN) model and the extracted values of phase coherence length (l) and α are ~420 nm and ~-0.52 respectively. The power law variation of l (~T-0.46) indicates the presence of the 2D surface states in DPB film. The Dirac nature of the surface states is further confirmed by Landau-level fan diagram analysis of SdH oscillations of the magneto-transport data. This analysis shows a finite Berry phase of 0.90π ± 0.16, reasonably close to the expected π value. Sheet Carrier density, ns ~ 2.56 × 1012 cm-2, calculated from the SdH oscillations (f SdH ~ 106 T) and Hall measurements agree well with each other. These findings demonstrate that the half Heusler DPB thin films (~15-20 nm) can be used as a suitable material for investigating the novel intrinsic quantum transport properties of surface Dirac fermions.

UR - http://www.scopus.com/inward/record.url?scp=85049392535&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049392535&partnerID=8YFLogxK

U2 - 10.1038/s41598-018-28382-1

DO - 10.1038/s41598-018-28382-1

M3 - Article

AN - SCOPUS:85049392535

VL - 8

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 9931

ER -