Wafer-scale SiC rich nano-coating layer by Ar+ and Xe+ ion mixing

G. Battistig, S. Gurbán, G. Sáfrán, A. Sulyok, A. Németh, P. Panjan, Z. Zolnai, M. Menyhárd

Research output: Contribution to journalArticle

5 Citations (Scopus)


Ion irradiation of interfaces causes intermixing of the adjacent regions, which leads to compound formation in certain cases. With the aim of building, some nm thick protective coating at ambient temperature, C/Si/C/Si/C/Si substrate samples were irradiated with Ar+, Xe+, and Ga+ ions in the energy and fluence ranges of 20–200 keV and 1–3 × 1016 ion cm− 2, respectively. The effect of ion irradiation was studied by Auger electron spectroscopy depth profiling and cross sectional transmission electron microscopy. All ion irradiations produced SiC rich regions the thickness of which, being some nm, could be tailored by changing the ion irradiation conditions. The chemical resistance of the SiC rich layer has been tested by polysilicon etchant. Rutherford Backscattering Spectrometry (RBS) analysis showed that etching rate of the SiC rich region was orders of magnitude lower than that of polysilicon on the whole irradiated area. It was also shown that Transport of Ions in Dynamic (TRIDYN) simulation combined with a simple compound formation rule provides a fair description of the resultant SiC distributions. Thus, it is possible to design and fabricate wafer-scale SiC for a given sample architecture by “TRIDYN simulation assisted” ion irradiation.

Original languageEnglish
Pages (from-to)320-326
Number of pages7
JournalSurface and Coatings Technology
Publication statusPublished - Sep 25 2016


  • Composite coating
  • Ion mixing
  • SiC nanoparticles
  • SiC rich nano coating

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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