Wafer curvature analysis in 3C-SiC layers grown on (0 0 1) and (1 1 1) Si substrates

Matteo Bosi, Giovanni Attolini, Bernard E. Watts, Francesca Rossi, Claudio Ferrari, F. Riesz, Liudi Jiang

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

To assess deformation issues in the vapor phase epitaxy of 3C-SiC on (0 0 1) and (1 1 1) Si substrates, we investigated different pre-growth (carburisation) procedures, adding various amount of SiH4 to C 3H8. The mechanical deformation of the samples was measured by quantitative Makyoh topography, through which 3D deformation maps of the entire wafers were obtained. X-ray diffraction was used to check the crystal quality of the layers and, in transmission geometry, to assess whether the observed deformation was plastic or elastic. Residual stress of the deposited 3C-SiC layers was investigated across the entire wafer substrates by using Raman spectroscopy and values between 0.5 and 1 GPa were found. It was observed that, for a given carburisation procedure, the crystalline orientation of the Si substrates plays an important role in the substrate curvature (convex and concave). The addition of SiH4 during carburisation ramp leads to increased deformation for SiC/Si (0 0 1), while decreased deformation for SiC/Si (1 1 1).

Original languageEnglish
Pages (from-to)401-405
Number of pages5
JournalJournal of Crystal Growth
Volume318
Issue number1
DOIs
Publication statusPublished - Mar 1 2011

Fingerprint

curvature
wafers
Substrates
Vapor phase epitaxy
elastic deformation
Elastic deformation
ramps
vapor phase epitaxy
Crystal orientation
Topography
plastic deformation
residual stress
Raman spectroscopy
Residual stresses
Plastic deformation
topography
Crystalline materials
X ray diffraction
Crystals
Geometry

Keywords

  • A1. Stresses
  • A3. Vapor phase epitaxy
  • B2. Semiconducting silicon compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Wafer curvature analysis in 3C-SiC layers grown on (0 0 1) and (1 1 1) Si substrates. / Bosi, Matteo; Attolini, Giovanni; Watts, Bernard E.; Rossi, Francesca; Ferrari, Claudio; Riesz, F.; Jiang, Liudi.

In: Journal of Crystal Growth, Vol. 318, No. 1, 01.03.2011, p. 401-405.

Research output: Contribution to journalArticle

Bosi, Matteo ; Attolini, Giovanni ; Watts, Bernard E. ; Rossi, Francesca ; Ferrari, Claudio ; Riesz, F. ; Jiang, Liudi. / Wafer curvature analysis in 3C-SiC layers grown on (0 0 1) and (1 1 1) Si substrates. In: Journal of Crystal Growth. 2011 ; Vol. 318, No. 1. pp. 401-405.
@article{7faa5b7fc6054e5492b4b2567a4e083b,
title = "Wafer curvature analysis in 3C-SiC layers grown on (0 0 1) and (1 1 1) Si substrates",
abstract = "To assess deformation issues in the vapor phase epitaxy of 3C-SiC on (0 0 1) and (1 1 1) Si substrates, we investigated different pre-growth (carburisation) procedures, adding various amount of SiH4 to C 3H8. The mechanical deformation of the samples was measured by quantitative Makyoh topography, through which 3D deformation maps of the entire wafers were obtained. X-ray diffraction was used to check the crystal quality of the layers and, in transmission geometry, to assess whether the observed deformation was plastic or elastic. Residual stress of the deposited 3C-SiC layers was investigated across the entire wafer substrates by using Raman spectroscopy and values between 0.5 and 1 GPa were found. It was observed that, for a given carburisation procedure, the crystalline orientation of the Si substrates plays an important role in the substrate curvature (convex and concave). The addition of SiH4 during carburisation ramp leads to increased deformation for SiC/Si (0 0 1), while decreased deformation for SiC/Si (1 1 1).",
keywords = "A1. Stresses, A3. Vapor phase epitaxy, B2. Semiconducting silicon compounds",
author = "Matteo Bosi and Giovanni Attolini and Watts, {Bernard E.} and Francesca Rossi and Claudio Ferrari and F. Riesz and Liudi Jiang",
year = "2011",
month = "3",
day = "1",
doi = "10.1016/j.jcrysgro.2010.10.042",
language = "English",
volume = "318",
pages = "401--405",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Wafer curvature analysis in 3C-SiC layers grown on (0 0 1) and (1 1 1) Si substrates

AU - Bosi, Matteo

AU - Attolini, Giovanni

AU - Watts, Bernard E.

AU - Rossi, Francesca

AU - Ferrari, Claudio

AU - Riesz, F.

AU - Jiang, Liudi

PY - 2011/3/1

Y1 - 2011/3/1

N2 - To assess deformation issues in the vapor phase epitaxy of 3C-SiC on (0 0 1) and (1 1 1) Si substrates, we investigated different pre-growth (carburisation) procedures, adding various amount of SiH4 to C 3H8. The mechanical deformation of the samples was measured by quantitative Makyoh topography, through which 3D deformation maps of the entire wafers were obtained. X-ray diffraction was used to check the crystal quality of the layers and, in transmission geometry, to assess whether the observed deformation was plastic or elastic. Residual stress of the deposited 3C-SiC layers was investigated across the entire wafer substrates by using Raman spectroscopy and values between 0.5 and 1 GPa were found. It was observed that, for a given carburisation procedure, the crystalline orientation of the Si substrates plays an important role in the substrate curvature (convex and concave). The addition of SiH4 during carburisation ramp leads to increased deformation for SiC/Si (0 0 1), while decreased deformation for SiC/Si (1 1 1).

AB - To assess deformation issues in the vapor phase epitaxy of 3C-SiC on (0 0 1) and (1 1 1) Si substrates, we investigated different pre-growth (carburisation) procedures, adding various amount of SiH4 to C 3H8. The mechanical deformation of the samples was measured by quantitative Makyoh topography, through which 3D deformation maps of the entire wafers were obtained. X-ray diffraction was used to check the crystal quality of the layers and, in transmission geometry, to assess whether the observed deformation was plastic or elastic. Residual stress of the deposited 3C-SiC layers was investigated across the entire wafer substrates by using Raman spectroscopy and values between 0.5 and 1 GPa were found. It was observed that, for a given carburisation procedure, the crystalline orientation of the Si substrates plays an important role in the substrate curvature (convex and concave). The addition of SiH4 during carburisation ramp leads to increased deformation for SiC/Si (0 0 1), while decreased deformation for SiC/Si (1 1 1).

KW - A1. Stresses

KW - A3. Vapor phase epitaxy

KW - B2. Semiconducting silicon compounds

UR - http://www.scopus.com/inward/record.url?scp=79952735548&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952735548&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2010.10.042

DO - 10.1016/j.jcrysgro.2010.10.042

M3 - Article

AN - SCOPUS:79952735548

VL - 318

SP - 401

EP - 405

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -