Void-free epitaxial growth of cubic SiC crystallites during CO heat treatment of oxidized silicon

Olga H. Krafcsik, György Vida, Katalin V. Josepovits, Peter Deák, György Z. Radnóczi, Béla Pécz, István Bársony

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report on a novel method for epitaxial 3C-SiC growth on Si, achieved by annealing of a high-quality SiO2/Si structure in a CO containing gas ambient. In this way high quality epitaxial 3C-SiC seeds are produced on Si (001) surfaces. The SiC crystallites grow into the Si surface layer without voids at the Si/SiC interface. So far a 20 % SiC coverage of the Si surface has been achieved with some SiC crystallites coalescing without grain boundaries. The system has been investigated by TEM (Transmission Electron Microscopy) and CV (Capacitance-Voltage) measurements.

Original languageEnglish
Pages (from-to)359-362
Number of pages4
JournalMaterials Science Forum
Volume389-393
Issue number1
DOIs
Publication statusPublished - Jan 1 2002

Keywords

  • CO-annealing
  • Epitaxial growth
  • Void-free

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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