Photoemission of mixed crystalline GexSi1-x samples was studied. Thin epitaxial layers on Si substrates were prepared by gaseous transport process. Measurements were made in 10-9 torr UHV on atomic clean surfaces prepared by chemical etching and heat treatment in vacuum. The quantum efficiency, threshold of photoemission, work function, electron affinity and energy distribution of photoelectrons excited by 4-6.2 eV photons were determined. A gradual shift of characteristics with composition was observed. The work function (surface Fermi level) of the samples, determined by the retarding field method of Hughes, corresponded to the bulk Fermi level.
ASJC Scopus subject areas
- Nuclear and High Energy Physics