Visualization of heavy ion-induced charge production in a CMOS image sensor

J. Végh, A. Kerek, W. Klamra, J. Molnár, L. O. Norlin, D. Novák, A. Sanchez-Crespo, J. Van Der Marel, A. Fenyvesi, I. Valastyán, A. Sipos

Research output: Contribution to journalConference article

Abstract

A commercial CMOS image sensor was irradiated with heavy ion beams in the several MeV energy range. The image sensor is equipped with a standard video output. The data were collected on-line through frame grabbing and analysed off-line after digitisation. It was shown that the response of the image sensor to the heavy ion bombardment varied with the type and energy of the projectiles. The sensor will be used for the CMS Barrel Muon Alignment system.

Original languageEnglish
Pages (from-to)229-235
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume525
Issue number1-2
DOIs
Publication statusPublished - Jun 1 2004
EventProceedings of the International Conference on Imaging Technique - Stockholm, Sweden
Duration: Jun 24 2003Jun 27 2003

Keywords

  • CMOS image sensor chip
  • Detector response
  • Heavy ion irradiation
  • Nuclear track visualisation
  • Radiation tolerance

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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