Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H-Si C

Péter Udvarhelyi, Gergo Thiering, Naoya Morioka, Charles Babin, Florian Kaiser, Daniil Lukin, Takeshi Ohshima, Jawad Ul-Hassan, Nguyen Tien Son, Jelena Vučković, Jörg Wrachtrup, Adam Gali

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Abstract

Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum-technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H-SiC. We apply density-functional theory beyond the Born-Oppenheimer approximation to describe the temperature-dependent mixing of electronic excited states assisted by phonons. We obtain a polaronic gap of around 5 and 22 meV for the V1 and V2 centers, respectively, which results in a significant difference in the temperature-dependent dephasing and zero-field splitting of the excited states, which explains recent experimental findings. We also compute how crystal deformations affect the zero-phonon line of these emitters. Our predictions are important ingredients in any quantum applications of these qubits sensitive to these effects.

Original languageEnglish
Article number054017
JournalPhysical Review Applied
Volume13
Issue number5
DOIs
Publication statusPublished - May 2020

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Udvarhelyi, P., Thiering, G., Morioka, N., Babin, C., Kaiser, F., Lukin, D., Ohshima, T., Ul-Hassan, J., Son, N. T., Vučković, J., Wrachtrup, J., & Gali, A. (2020). Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H-Si C. Physical Review Applied, 13(5), [054017]. https://doi.org/10.1103/PhysRevApplied.13.054017