Vertically stacked quantum dots grown by ALMBE and MBE

P. Frigeri, A. Bosacchi, S. Franchi, P. Allegri, V. Avanzini

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

We report on a systematic study of InAs/GaAs self-aggregated quantum dot (QD) structures grown by ALMBE and MBE, consisting of 1-11 QD layers and of spacer layers with thicknesses of 20 - 53 ML. The AFM study of the topmost, untapped layer of QDs shows that ALMBE structures are more ordered and have QDs with larger dimensions and with sharper size distributions than the MBE counterparts. The energies and full-widths at half-maxima (fwhm) of 10 K photoluminescence (PL) transitions have been studied as functions of the number of stacked layers and of spacer thicknesses. We show that ALMBE allows the growth of stacked-QD structures that have bright PL at RT, emission wavelengths at RT very close to the 1.3 μm spectral window and 10 K fwhms as low as 22 meV.

Original languageEnglish
Pages (from-to)1136-1138
Number of pages3
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - May 1999

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Molecular beam epitaxy
Semiconductor quantum dots
quantum dots
Photoluminescence
spacers
Full width at half maximum
photoluminescence
Wavelength
atomic force microscopy
wavelengths
energy
gallium arsenide
indium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Vertically stacked quantum dots grown by ALMBE and MBE. / Frigeri, P.; Bosacchi, A.; Franchi, S.; Allegri, P.; Avanzini, V.

In: Journal of Crystal Growth, Vol. 201, 05.1999, p. 1136-1138.

Research output: Contribution to journalArticle

Frigeri, P. ; Bosacchi, A. ; Franchi, S. ; Allegri, P. ; Avanzini, V. / Vertically stacked quantum dots grown by ALMBE and MBE. In: Journal of Crystal Growth. 1999 ; Vol. 201. pp. 1136-1138.
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