Vertical transport through GaAs-based heterostructures with misfit dislocations in a strong magnetic field

T. Wosińskt, T. Figielski, A. Mąkosa, W. Dobrowolski, O. Pelya, B. F. Ushel, B. Pécz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Current passing in the forward direction through a GaAs-based heterojunction at liquid helium temperatures exhibits, under a strong magnetic field applied parallel to the junction plane, regular fluctuations. We argue that these fluctuations are associated with the formation of closed Aharonov-Bohm-type orbits encircling misfit dislocations generated at the interface in which the current carriers are temporarily trapped.

Original languageEnglish
Title of host publicationConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages451-454
Number of pages4
Volume2000-January
ISBN (Print)0780366980
DOIs
Publication statusPublished - 2000
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
Duration: Dec 6 2000Dec 8 2000

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
CountryAustralia
CityBundoora
Period12/6/0012/8/00

Fingerprint

Helium
Dislocations (crystals)
Heterojunctions
Orbits
Magnetic fields
Liquids
Temperature
Direction compound
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Wosińskt, T., Figielski, T., Mąkosa, A., Dobrowolski, W., Pelya, O., Ushel, B. F., & Pécz, B. (2000). Vertical transport through GaAs-based heterostructures with misfit dislocations in a strong magnetic field. In Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD (Vol. 2000-January, pp. 451-454). [1022987] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2000.1022987

Vertical transport through GaAs-based heterostructures with misfit dislocations in a strong magnetic field. / Wosińskt, T.; Figielski, T.; Mąkosa, A.; Dobrowolski, W.; Pelya, O.; Ushel, B. F.; Pécz, B.

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 451-454 1022987.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wosińskt, T, Figielski, T, Mąkosa, A, Dobrowolski, W, Pelya, O, Ushel, BF & Pécz, B 2000, Vertical transport through GaAs-based heterostructures with misfit dislocations in a strong magnetic field. in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. vol. 2000-January, 1022987, Institute of Electrical and Electronics Engineers Inc., pp. 451-454, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000, Bundoora, Australia, 12/6/00. https://doi.org/10.1109/COMMAD.2000.1022987
Wosińskt T, Figielski T, Mąkosa A, Dobrowolski W, Pelya O, Ushel BF et al. Vertical transport through GaAs-based heterostructures with misfit dislocations in a strong magnetic field. In Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. Vol. 2000-January. Institute of Electrical and Electronics Engineers Inc. 2000. p. 451-454. 1022987 https://doi.org/10.1109/COMMAD.2000.1022987
Wosińskt, T. ; Figielski, T. ; Mąkosa, A. ; Dobrowolski, W. ; Pelya, O. ; Ushel, B. F. ; Pécz, B. / Vertical transport through GaAs-based heterostructures with misfit dislocations in a strong magnetic field. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. pp. 451-454
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