Vertical transport through GaAs-based heterostructures with misfit dislocations in a strong magnetic field

T. Wosińskt, T. Figielski, A. Mąkosa, W. Dobrowolski, O. Pelya, B. F. Ushel, B. Pécz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Current passing in the forward direction through a GaAs-based heterojunction at liquid helium temperatures exhibits, under a strong magnetic field applied parallel to the junction plane, regular fluctuations. We argue that these fluctuations are associated with the formation of closed Aharonov-Bohm-type orbits encircling misfit dislocations generated at the interface in which the current carriers are temporarily trapped.

Original languageEnglish
Title of host publicationCOMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
EditorsLeonard D. Broekman, Brian F. Usher, John D. Riley
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages451-454
Number of pages4
ISBN (Electronic)0780366980
DOIs
Publication statusPublished - Jan 1 2000
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
Duration: Dec 6 2000Dec 8 2000

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume2000-January

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
CountryAustralia
CityBundoora
Period12/6/0012/8/00

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Wosińskt, T., Figielski, T., Mąkosa, A., Dobrowolski, W., Pelya, O., Ushel, B. F., & Pécz, B. (2000). Vertical transport through GaAs-based heterostructures with misfit dislocations in a strong magnetic field. In L. D. Broekman, B. F. Usher, & J. D. Riley (Eds.), COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices (pp. 451-454). [1022987] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2000-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2000.1022987