Density of states of a-Ge induced by 74+As implantation was measured by means of the photoelectron energy distribution. The result is a very structureless curve. The density of states is very low at 0-5 eV., but larger at 5-9 eV energy regions of the valence band. These data indicate that the As implanted a-Ge is an amorphous state of Ge having distorted tetrahedral coordination.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry