Vacancy-acceptor complexes in germanium produced by ion implantation

U. Feuser, R. Vianden, E. Alves, M. F. da Silva, E. Szilágyi, F. Pászti, J. C. Soares

Research output: Contribution to journalArticle

4 Citations (Scopus)


Combining results obtained by the γ-γ perturbed angular correlation method, Rutherford backscattering and elastic recoil detection of hydrogen, a defect complex formed in germanium by indium implantation is identified as a vacancy trapped by the indium probe.

Original languageEnglish
Pages (from-to)1049-1052
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Issue numberPART 2
Publication statusPublished - Jul 1 1991

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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