USE OF THE REACTION **1**0B(n, alpha )**7Li TO DETERMINE THE DISTRIBUTION OF BORON IMPLANTED IN SILICON.

J. Bogancs, J. Gyulai, A. Hagy, V. M. Nazarov, Z. Seres, A. Szabo

Research output: Contribution to journalArticle

Abstract

A method is described for the investigation of the distribution of boron atoms implanted in Si by ion bombardment. The method is based on measuring the energy lost by the alpha particles produced in the samples under the influence of a neutron beam. The characteristics of the method are presented and its capabilities are estimated.

Original languageEnglish
Pages (from-to)59-64
Number of pages6
JournalInstruments and Experimental Techniques (English Translation of Pribory I Tekhnika Eksperimenta)
Volume22
Issue number1
Publication statusPublished - Jan 1 1979

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ASJC Scopus subject areas

  • Instrumentation

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