Use of atomic-force microscopy and of a parallel irradiation geometry for in-depth characterization of damage produced by swift Kr ions in silicon

L. P. Biró, J. Gyulai, K. Havancsák, A. Yu Didyk, S. Bogen, L. Frey

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Silicon samples were irradiated with 209 MeV Kr ions in a direction parallel with the (100) plane. The variation vs distance from the irradiated edge, the (010) plane, i.e., vs depth, of the defects produced by the irradiation was evaluated without any sample preparation by atomic-force microscopy (AFM) and spreading resistance measurement on the (100) plane. Both methods indicate a penetration depth of 28 μm, in good agreement with the value given by Monte Carlo (TRIM) range calculation. AFM measurements allowed distinction between four depth zones to which different damage production mechanisms can be ascribed.

Original languageEnglish
Pages (from-to)11853-11856
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume54
Issue number17
Publication statusPublished - Nov 1 1996

Fingerprint

Silicon
Atomic force microscopy
Irradiation
atomic force microscopy
Ions
damage
irradiation
Geometry
silicon
geometry
ions
Defects
penetration
preparation
defects
Direction compound

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

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AU - Biró, L. P.

AU - Gyulai, J.

AU - Havancsák, K.

AU - Didyk, A. Yu

AU - Bogen, S.

AU - Frey, L.

PY - 1996/11/1

Y1 - 1996/11/1

N2 - Silicon samples were irradiated with 209 MeV Kr ions in a direction parallel with the (100) plane. The variation vs distance from the irradiated edge, the (010) plane, i.e., vs depth, of the defects produced by the irradiation was evaluated without any sample preparation by atomic-force microscopy (AFM) and spreading resistance measurement on the (100) plane. Both methods indicate a penetration depth of 28 μm, in good agreement with the value given by Monte Carlo (TRIM) range calculation. AFM measurements allowed distinction between four depth zones to which different damage production mechanisms can be ascribed.

AB - Silicon samples were irradiated with 209 MeV Kr ions in a direction parallel with the (100) plane. The variation vs distance from the irradiated edge, the (010) plane, i.e., vs depth, of the defects produced by the irradiation was evaluated without any sample preparation by atomic-force microscopy (AFM) and spreading resistance measurement on the (100) plane. Both methods indicate a penetration depth of 28 μm, in good agreement with the value given by Monte Carlo (TRIM) range calculation. AFM measurements allowed distinction between four depth zones to which different damage production mechanisms can be ascribed.

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