Silicon samples were irradiated with 209 MeV Kr ions in a direction parallel with the (100) plane. The variation vs distance from the irradiated edge, the (010) plane, i.e., vs depth, of the defects produced by the irradiation was evaluated without any sample preparation by atomic-force microscopy (AFM) and spreading resistance measurement on the (100) plane. Both methods indicate a penetration depth of 28 μm, in good agreement with the value given by Monte Carlo (TRIM) range calculation. AFM measurements allowed distinction between four depth zones to which different damage production mechanisms can be ascribed.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1996|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics