Unusual atomic arrangements in amorphous silicon

S. Kugler, K. Kohary, K. Kádas, L. Pusztai

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21 Citations (Scopus)

Abstract

Unusual atomic arrangements in amorphous silicon were discussed. Tight-binding molecular physics method and Monte Carlo method were used. Results showed the effect of small bond angles on the electronic density of states.

Original languageEnglish
Pages (from-to)305-309
Number of pages5
JournalSolid State Communications
Volume127
Issue number4
DOIs
Publication statusPublished - Jul 1 2003

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Keywords

  • A. Disordered systems
  • A. Semiconductors
  • C. Defects
  • D. Electronic band structure

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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