Unusual atomic arrangements in amorphous silicon

S. Kugler, K. Kohary, K. Kádas, L. Pusztai

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Unusual atomic arrangements in amorphous silicon were discussed. Tight-binding molecular physics method and Monte Carlo method were used. Results showed the effect of small bond angles on the electronic density of states.

Original languageEnglish
Pages (from-to)305-309
Number of pages5
JournalSolid State Communications
Volume127
Issue number4
DOIs
Publication statusPublished - Jul 2003

Fingerprint

Molecular physics
molecular physics
Electronic density of states
Amorphous silicon
amorphous silicon
Monte Carlo method
Monte Carlo methods
electronics

Keywords

  • A. Disordered systems
  • A. Semiconductors
  • C. Defects
  • D. Electronic band structure

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Unusual atomic arrangements in amorphous silicon. / Kugler, S.; Kohary, K.; Kádas, K.; Pusztai, L.

In: Solid State Communications, Vol. 127, No. 4, 07.2003, p. 305-309.

Research output: Contribution to journalArticle

Kugler, S. ; Kohary, K. ; Kádas, K. ; Pusztai, L. / Unusual atomic arrangements in amorphous silicon. In: Solid State Communications. 2003 ; Vol. 127, No. 4. pp. 305-309.
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