ULTRAVIOLET PHOTOEMISSION, AUGER AND RUTHERFORD BACKSCATTERING INVESTIGATION OF ION-IMPLANTED AMORPHOUS SILICON.

G. Pető, J. Kanski, T. Lohner

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

UPS, AES and RBS measurements were carried out on ion-implanted a-Si. The electronic structure and structural-disorder were measured in the amorphous and crystalline states. The electronic structure of the two states differs very much. The amorphous to crystalline transition process detected by UPS and by RBS was not the same.

Original languageEnglish
Title of host publicationSociety of Petroleum Engineers of AIME, (Paper) SPE
PublisherSoc Fr du Vide
Pages971-974
Number of pages4
Volume2
Publication statusPublished - 1980
EventUnknown conference - Cannes, Fr
Duration: Sep 22 1980Sep 26 1980

Other

OtherUnknown conference
CityCannes, Fr
Period9/22/809/26/80

Fingerprint

Rutherford backscattering spectroscopy
Photoemission
Amorphous silicon
Electronic structure
Crystalline materials
Ions

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Pető, G., Kanski, J., & Lohner, T. (1980). ULTRAVIOLET PHOTOEMISSION, AUGER AND RUTHERFORD BACKSCATTERING INVESTIGATION OF ION-IMPLANTED AMORPHOUS SILICON. In Society of Petroleum Engineers of AIME, (Paper) SPE (Vol. 2, pp. 971-974). Soc Fr du Vide.

ULTRAVIOLET PHOTOEMISSION, AUGER AND RUTHERFORD BACKSCATTERING INVESTIGATION OF ION-IMPLANTED AMORPHOUS SILICON. / Pető, G.; Kanski, J.; Lohner, T.

Society of Petroleum Engineers of AIME, (Paper) SPE. Vol. 2 Soc Fr du Vide, 1980. p. 971-974.

Research output: Chapter in Book/Report/Conference proceedingChapter

Pető, G, Kanski, J & Lohner, T 1980, ULTRAVIOLET PHOTOEMISSION, AUGER AND RUTHERFORD BACKSCATTERING INVESTIGATION OF ION-IMPLANTED AMORPHOUS SILICON. in Society of Petroleum Engineers of AIME, (Paper) SPE. vol. 2, Soc Fr du Vide, pp. 971-974, Unknown conference, Cannes, Fr, 9/22/80.
Pető G, Kanski J, Lohner T. ULTRAVIOLET PHOTOEMISSION, AUGER AND RUTHERFORD BACKSCATTERING INVESTIGATION OF ION-IMPLANTED AMORPHOUS SILICON. In Society of Petroleum Engineers of AIME, (Paper) SPE. Vol. 2. Soc Fr du Vide. 1980. p. 971-974
Pető, G. ; Kanski, J. ; Lohner, T. / ULTRAVIOLET PHOTOEMISSION, AUGER AND RUTHERFORD BACKSCATTERING INVESTIGATION OF ION-IMPLANTED AMORPHOUS SILICON. Society of Petroleum Engineers of AIME, (Paper) SPE. Vol. 2 Soc Fr du Vide, 1980. pp. 971-974
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