Ultrahigh Al Schottky barrier to p-Si

Z. Horváth, M. Adam, V. Van Tuyen, C. Dücső

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

The possibility of barrier height enhancement of Schottky junction on p-type Si was studied by using a chemical passivation procedure. Schottky barrier heights up to 0.91 eV have been obtained, due probably to the unpinning of the Fermi-level at the Al/Si interface. It is probably the highest barrier height value published so far for a solid-state Schottky junction prepared on p-Si.

Original languageEnglish
Title of host publicationASDAM 1998 Conference Proceedings
Subtitle of host publication2nd International Conference on Advanced Semiconductor Devices And Microsystems
EditorsFrantisek Uherek, Vladimir Drobny, Juraj Breza, Daniel Donoval
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages83-86
Number of pages4
Volume1998-October
ISBN (Electronic)0780349091, 9780780349094
DOIs
Publication statusPublished - Jan 1 1998
Event2nd International Conference on Advanced Semiconductor Devices And Microsystems, ASDAM 1998 - Smolenice, Slovakia
Duration: Oct 5 1998Oct 7 1998

Other

Other2nd International Conference on Advanced Semiconductor Devices And Microsystems, ASDAM 1998
CountrySlovakia
CitySmolenice
Period10/5/9810/7/98

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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    Horváth, Z., Adam, M., Van Tuyen, V., & Dücső, C. (1998). Ultrahigh Al Schottky barrier to p-Si. In F. Uherek, V. Drobny, J. Breza, & D. Donoval (Eds.), ASDAM 1998 Conference Proceedings: 2nd International Conference on Advanced Semiconductor Devices And Microsystems (Vol. 1998-October, pp. 83-86). [730172] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASDAM.1998.730172