Ultrafast diffusion of Hg in Hg1-xCdxTe (x ≈ 0.21)

E. Belas, P. Höschl, R. Grill, J. Franc, P. Moravec, K. Lischka, H. Sitter, A. Toth

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The shape and position of the p-n junction created by ion beam milling was studied using a scanning electron microscope. The shape of the p-n junction demonstrates the diffusion-like character of the p-n conversion process. A model for the explanation of the conversion based on the assumption of an extremely low Hg interstitial migration energy is proposed. A comparison with radiotracer self-diffusion is reported.

Original languageEnglish
Pages (from-to)940-943
Number of pages4
JournalJournal of Crystal Growth
Volume138
Issue number1-4
DOIs
Publication statusPublished - Apr 2 1994

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Belas, E., Höschl, P., Grill, R., Franc, J., Moravec, P., Lischka, K., Sitter, H., & Toth, A. (1994). Ultrafast diffusion of Hg in Hg1-xCdxTe (x ≈ 0.21). Journal of Crystal Growth, 138(1-4), 940-943. https://doi.org/10.1016/0022-0248(94)90935-0