Ultra-thin insulator covered silicon: Potential barriers and tunnel currents

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The surface voltage of ultra-thin insulator (native oxide) layer upon silicon substrate has been measured by the vibrating capacitor (Kelvin) method. A change of some hundreds of millivolts in the surface voltage has been observed on the illuminated ultra-thin insulator-Si system. The original (dark) value of the surface voltage is reached through a transient process. The present article discusses the origin and nature of this surface voltage transient (charging and discharging of the surface) and evaluation of the measured results for calculation of the tunnel current through ultra-thin insulator layer.

Original languageEnglish
Pages (from-to)235-241
Number of pages7
JournalSolid-State Electronics
Volume46
Issue number2
DOIs
Publication statusPublished - Feb 1 2002

Keywords

  • Electron tunneling
  • Native oxide
  • Surface charge, Fermi-level pinning
  • Surface potential
  • Surface voltage
  • Vibrating capacitor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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