Ultra shallow as profiling before and after spike annealing using medium energy ion scattering

Satoshi Abo, Satoshi Ichihara, T. Lohner, J. Gyulai, Fujio Wakaya, Mikio Takai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ultra shallow arsenic profiles implanted into Si with an energy range from 0.5 to 3 keV to a dose of 8 × 1014 ions/cm2 before and after spike annealing were measured by medium energy ion scattering (MEIS) with a toroidal electrostatic analyzer (TEA). A shift of the peak of arsenic profile to the surface after spike annealing was observed by MEIS measurement. Most of the implanted arsenic atoms were trapped in the native oxide layer after spike annealing.

Original languageEnglish
Title of host publicationExtended Abstracts of the Fifth International Workshop on Junction Technology, 2005
Pages49-50
Number of pages2
Volume2005
Publication statusPublished - 2005
Event5th International Workshop on Junction Technology, 2005 - Osaka, Japan
Duration: Jun 7 2005Jun 8 2005

Other

Other5th International Workshop on Junction Technology, 2005
CountryJapan
CityOsaka
Period6/7/056/8/05

Fingerprint

Arsenic
Scattering
Annealing
Ions
Electrostatics
Atoms
Oxides

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Abo, S., Ichihara, S., Lohner, T., Gyulai, J., Wakaya, F., & Takai, M. (2005). Ultra shallow as profiling before and after spike annealing using medium energy ion scattering. In Extended Abstracts of the Fifth International Workshop on Junction Technology, 2005 (Vol. 2005, pp. 49-50). [1598664]

Ultra shallow as profiling before and after spike annealing using medium energy ion scattering. / Abo, Satoshi; Ichihara, Satoshi; Lohner, T.; Gyulai, J.; Wakaya, Fujio; Takai, Mikio.

Extended Abstracts of the Fifth International Workshop on Junction Technology, 2005. Vol. 2005 2005. p. 49-50 1598664.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abo, S, Ichihara, S, Lohner, T, Gyulai, J, Wakaya, F & Takai, M 2005, Ultra shallow as profiling before and after spike annealing using medium energy ion scattering. in Extended Abstracts of the Fifth International Workshop on Junction Technology, 2005. vol. 2005, 1598664, pp. 49-50, 5th International Workshop on Junction Technology, 2005, Osaka, Japan, 6/7/05.
Abo S, Ichihara S, Lohner T, Gyulai J, Wakaya F, Takai M. Ultra shallow as profiling before and after spike annealing using medium energy ion scattering. In Extended Abstracts of the Fifth International Workshop on Junction Technology, 2005. Vol. 2005. 2005. p. 49-50. 1598664
Abo, Satoshi ; Ichihara, Satoshi ; Lohner, T. ; Gyulai, J. ; Wakaya, Fujio ; Takai, Mikio. / Ultra shallow as profiling before and after spike annealing using medium energy ion scattering. Extended Abstracts of the Fifth International Workshop on Junction Technology, 2005. Vol. 2005 2005. pp. 49-50
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