UHV aluminium oxide on silicon substrates: Electron spectroscopies analysis and electrical measurements

B. Gruzza, S. Merle, L. Bideux, C. Robert, L. Kövér, J. Toth, V. Matolin

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Thin Al2O3 films were prepared using a special evaporation cell permitting to grow clean and stoichiometric layers in ultrahigh vacuum conditions. The layers were deposited on silicon substrates at different preparation conditions. The obtained films were characterized by Auger electron spectroscopy (AES, in situ) and by XPS (ex situ) methods. The good quality of layers, shown by the electron spectroscopy methods, was confirmed by capacitance-voltage (C-V) electrical measurements.

Original languageEnglish
Pages (from-to)656-662
Number of pages7
JournalApplied Surface Science
Volume175-176
DOIs
Publication statusPublished - May 15 2001

Fingerprint

Electron spectroscopy
Aluminum Oxide
Ultrahigh vacuum
Silicon
Auger electron spectroscopy
electrical measurement
electron spectroscopy
Evaporation
Capacitance
X ray photoelectron spectroscopy
aluminum oxides
Aluminum
Thin films
Oxides
Electric potential
silicon
Substrates
ultrahigh vacuum
Auger spectroscopy
capacitance

Keywords

  • Electron spectroscopy for chemical analysis
  • Electronic transport
  • MIS structures
  • Thin film growth
  • Vacuum deposition

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

UHV aluminium oxide on silicon substrates : Electron spectroscopies analysis and electrical measurements. / Gruzza, B.; Merle, S.; Bideux, L.; Robert, C.; Kövér, L.; Toth, J.; Matolin, V.

In: Applied Surface Science, Vol. 175-176, 15.05.2001, p. 656-662.

Research output: Contribution to journalArticle

Gruzza, B. ; Merle, S. ; Bideux, L. ; Robert, C. ; Kövér, L. ; Toth, J. ; Matolin, V. / UHV aluminium oxide on silicon substrates : Electron spectroscopies analysis and electrical measurements. In: Applied Surface Science. 2001 ; Vol. 175-176. pp. 656-662.
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