Type-I and type-II transitions in electroluminescence spectra of GaAs/AlAs monolayer multiquantum-well structures

J. Kováč, D. Pudiš, A. Šatka, J. Lábár, J. Jakabovič, R. Schwabe, V. Gottschalch, G. Benndorf, B. Rheinländer

Research output: Contribution to journalArticle

Abstract

We have investigated the temperature dependence of type-I and type-II optical transitions in electroluminescence spectra from type-II (GaAs)n/(AlAs)m multiquantum-well structures embedded in InAlP confinement layers. The experimental results confirm a thermally assisted up-conversion of electrons from the AlAs conduction band X-point into the energetically higher lying quantized GaAs Γ-states. This process yields to a remarkable enhancement of the radiative type-I recombination in the type-II structures.

Original languageEnglish
Pages (from-to)309-316
Number of pages8
JournalMicroelectronic Engineering
Volume51
DOIs
Publication statusPublished - May 2000

Fingerprint

Optical transitions
Electroluminescence
Conduction bands
optical transition
electroluminescence
Monolayers
conduction bands
temperature dependence
Electrons
augmentation
electrons
Temperature
gallium arsenide

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Type-I and type-II transitions in electroluminescence spectra of GaAs/AlAs monolayer multiquantum-well structures. / Kováč, J.; Pudiš, D.; Šatka, A.; Lábár, J.; Jakabovič, J.; Schwabe, R.; Gottschalch, V.; Benndorf, G.; Rheinländer, B.

In: Microelectronic Engineering, Vol. 51, 05.2000, p. 309-316.

Research output: Contribution to journalArticle

Kováč, J, Pudiš, D, Šatka, A, Lábár, J, Jakabovič, J, Schwabe, R, Gottschalch, V, Benndorf, G & Rheinländer, B 2000, 'Type-I and type-II transitions in electroluminescence spectra of GaAs/AlAs monolayer multiquantum-well structures', Microelectronic Engineering, vol. 51, pp. 309-316. https://doi.org/10.1016/S0167-9317(99)00497-9
Kováč, J. ; Pudiš, D. ; Šatka, A. ; Lábár, J. ; Jakabovič, J. ; Schwabe, R. ; Gottschalch, V. ; Benndorf, G. ; Rheinländer, B. / Type-I and type-II transitions in electroluminescence spectra of GaAs/AlAs monolayer multiquantum-well structures. In: Microelectronic Engineering. 2000 ; Vol. 51. pp. 309-316.
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