Two-phase structure of plasma-polymerized thiophene-passivated GaAs Schottky-like metal-insulator-semiconductor diodes

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Abstract

Recently GaAs metal-semiconductor Schottky and plasma-polymerized thiophene-passivated metal-insulator-semiconductor (MIS) diodes were studied. The capacitance-voltage (C-V) results were evaluated by a simple mechanical application of the Schottky capacitance theory to the MIS devices. In this communication it is shown that there is a large discrepancy between the experimental C-V characteristics obtained for the MIS diodes and the theoretical ones following from the depletion layer capacitance theory. The only reasonable explanation of this discrepancy is a two-phase structure of the MIS devices, where one phase has a low- and the other has a high-voltage intercept of the C-2-V plot.

Original languageEnglish
Pages (from-to)5899-5901
Number of pages3
JournalJournal of Applied Physics
Volume68
Issue number11
DOIs
Publication statusPublished - 1990

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semiconductor diodes
MIS (semiconductors)
thiophenes
capacitance
semiconductor devices
capacitance-voltage characteristics
high voltages
depletion
plots
communication
electric potential
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Two-phase structure of plasma-polymerized thiophene-passivated GaAs Schottky-like metal-insulator-semiconductor diodes",
abstract = "Recently GaAs metal-semiconductor Schottky and plasma-polymerized thiophene-passivated metal-insulator-semiconductor (MIS) diodes were studied. The capacitance-voltage (C-V) results were evaluated by a simple mechanical application of the Schottky capacitance theory to the MIS devices. In this communication it is shown that there is a large discrepancy between the experimental C-V characteristics obtained for the MIS diodes and the theoretical ones following from the depletion layer capacitance theory. The only reasonable explanation of this discrepancy is a two-phase structure of the MIS devices, where one phase has a low- and the other has a high-voltage intercept of the C-2-V plot.",
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T1 - Two-phase structure of plasma-polymerized thiophene-passivated GaAs Schottky-like metal-insulator-semiconductor diodes

AU - Horváth, Zs J.

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N2 - Recently GaAs metal-semiconductor Schottky and plasma-polymerized thiophene-passivated metal-insulator-semiconductor (MIS) diodes were studied. The capacitance-voltage (C-V) results were evaluated by a simple mechanical application of the Schottky capacitance theory to the MIS devices. In this communication it is shown that there is a large discrepancy between the experimental C-V characteristics obtained for the MIS diodes and the theoretical ones following from the depletion layer capacitance theory. The only reasonable explanation of this discrepancy is a two-phase structure of the MIS devices, where one phase has a low- and the other has a high-voltage intercept of the C-2-V plot.

AB - Recently GaAs metal-semiconductor Schottky and plasma-polymerized thiophene-passivated metal-insulator-semiconductor (MIS) diodes were studied. The capacitance-voltage (C-V) results were evaluated by a simple mechanical application of the Schottky capacitance theory to the MIS devices. In this communication it is shown that there is a large discrepancy between the experimental C-V characteristics obtained for the MIS diodes and the theoretical ones following from the depletion layer capacitance theory. The only reasonable explanation of this discrepancy is a two-phase structure of the MIS devices, where one phase has a low- and the other has a high-voltage intercept of the C-2-V plot.

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