Trap centers in cuprous oxide

L. Papadimitriou, C. A. Dimitriadis, L. Dozsa

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The effect of annealing temperature on the trap density in Cu2O is investigated. From space charge limited current (SCLC), Hall effect and DLTS measurements it is demonstrated that there is a trap-band distribution with the Fermi level lying within the trap-band. The maximum of this trap-band distribution is just above the Fermi level. A theoretical model is introduced to explain this trap-band distribution. Annealing of the samples in air at 400-500°C for 5 h gives the lowest total trap concentration and the lowest resistivity of the material. The above annealing decreases the total number of traps by a factor of 3 compared to the as grown samples. The resistivity decreases also by at least one order of magnitude.

Original languageEnglish
Pages (from-to)1477-1482
Number of pages6
JournalSolid State Electronics
Issue number10
Publication statusPublished - Oct 1988


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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