Trap centers in cuprous oxide

L. Papadimitriou, C. A. Dimitriadis, L. Dozsa

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Abstract

The effect of annealing temperature on the trap density in Cu2O is investigated. From space charge limited current (SCLC), Hall effect and DLTS measurements it is demonstrated that there is a trap-band distribution with the Fermi level lying within the trap-band. The maximum of this trap-band distribution is just above the Fermi level. A theoretical model is introduced to explain this trap-band distribution. Annealing of the samples in air at 400-500°C for 5 h gives the lowest total trap concentration and the lowest resistivity of the material. The above annealing decreases the total number of traps by a factor of 3 compared to the as grown samples. The resistivity decreases also by at least one order of magnitude.

Original languageEnglish
Pages (from-to)1477-1482
Number of pages6
JournalSolid State Electronics
Volume31
Issue number10
DOIs
Publication statusPublished - Oct 1988

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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