Transport, magnetic and vibrational properties of chemically exfoliated few-layer graphene

Bence G. Márkus, F. Simon, Julio C. Chacón-Torres, Stephanie Reich, Péter Szirmai, Bálint Náfrádi, László Forró, Thomas Pichler, Philipp Vecera, Frank Hauke, Andreas Hirsch

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Abstractauthoren We study the vibrational, magnetic and transport properties of Few Layer Graphene (FLG) using Raman and electron spin resonance spectroscopy and microwave conductivity measurements. FLG samples were produced using wet chemical exfoliation with different post-processing, namely ultrasound treatment, shear mixing, and magnetic stirring. Raman spectroscopy shows a low intensity D mode which attests a high sample quality. The G mode is present at 1580 cm-1 as expected for graphene. The 2D mode consists of 2 components with varying intensities among the different samples. This is assigned to the presence of single and few layer graphene in the samples. Electron Spin Resonance (ESR) spectroscopy shows a main line in all types of materials with a width of about 1 mT and a g-factor in the range of 2.005-2.010. Paramagnetic defect centers with a uniaxial g-factor anisotropy are identified, which shows that these are related to the local sp2 bonds of the material. All kinds of investigated FLGs have a temperature dependent resistance which is compatible with a small gap semiconductor. The difference in resistance is related to the different grain size of the samples.

Original languageEnglish
Pages (from-to)2438-2443
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume252
Issue number11
DOIs
Publication statusPublished - Nov 1 2015

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Graphite
Graphene
graphene
transport properties
Electron spin resonance spectroscopy
magnetic properties
electron paramagnetic resonance
Transport properties
Raman spectroscopy
stirring
Magnetic properties
Anisotropy
Ultrasonics
Microwaves
spectroscopy
Semiconductor materials
Defects
grain size
shear
microwaves

Keywords

  • Chemical exfoliation
  • ESR
  • Graphene
  • Microwave conductivity
  • Raman

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Márkus, B. G., Simon, F., Chacón-Torres, J. C., Reich, S., Szirmai, P., Náfrádi, B., ... Hirsch, A. (2015). Transport, magnetic and vibrational properties of chemically exfoliated few-layer graphene. Physica Status Solidi (B) Basic Research, 252(11), 2438-2443. https://doi.org/10.1002/pssb.201552296

Transport, magnetic and vibrational properties of chemically exfoliated few-layer graphene. / Márkus, Bence G.; Simon, F.; Chacón-Torres, Julio C.; Reich, Stephanie; Szirmai, Péter; Náfrádi, Bálint; Forró, László; Pichler, Thomas; Vecera, Philipp; Hauke, Frank; Hirsch, Andreas.

In: Physica Status Solidi (B) Basic Research, Vol. 252, No. 11, 01.11.2015, p. 2438-2443.

Research output: Contribution to journalArticle

Márkus, BG, Simon, F, Chacón-Torres, JC, Reich, S, Szirmai, P, Náfrádi, B, Forró, L, Pichler, T, Vecera, P, Hauke, F & Hirsch, A 2015, 'Transport, magnetic and vibrational properties of chemically exfoliated few-layer graphene', Physica Status Solidi (B) Basic Research, vol. 252, no. 11, pp. 2438-2443. https://doi.org/10.1002/pssb.201552296
Márkus, Bence G. ; Simon, F. ; Chacón-Torres, Julio C. ; Reich, Stephanie ; Szirmai, Péter ; Náfrádi, Bálint ; Forró, László ; Pichler, Thomas ; Vecera, Philipp ; Hauke, Frank ; Hirsch, Andreas. / Transport, magnetic and vibrational properties of chemically exfoliated few-layer graphene. In: Physica Status Solidi (B) Basic Research. 2015 ; Vol. 252, No. 11. pp. 2438-2443.
@article{85eff4045d6e48b788d9c068a3f7252a,
title = "Transport, magnetic and vibrational properties of chemically exfoliated few-layer graphene",
abstract = "Abstractauthoren We study the vibrational, magnetic and transport properties of Few Layer Graphene (FLG) using Raman and electron spin resonance spectroscopy and microwave conductivity measurements. FLG samples were produced using wet chemical exfoliation with different post-processing, namely ultrasound treatment, shear mixing, and magnetic stirring. Raman spectroscopy shows a low intensity D mode which attests a high sample quality. The G mode is present at 1580 cm-1 as expected for graphene. The 2D mode consists of 2 components with varying intensities among the different samples. This is assigned to the presence of single and few layer graphene in the samples. Electron Spin Resonance (ESR) spectroscopy shows a main line in all types of materials with a width of about 1 mT and a g-factor in the range of 2.005-2.010. Paramagnetic defect centers with a uniaxial g-factor anisotropy are identified, which shows that these are related to the local sp2 bonds of the material. All kinds of investigated FLGs have a temperature dependent resistance which is compatible with a small gap semiconductor. The difference in resistance is related to the different grain size of the samples.",
keywords = "Chemical exfoliation, ESR, Graphene, Microwave conductivity, Raman",
author = "M{\'a}rkus, {Bence G.} and F. Simon and Chac{\'o}n-Torres, {Julio C.} and Stephanie Reich and P{\'e}ter Szirmai and B{\'a}lint N{\'a}fr{\'a}di and L{\'a}szl{\'o} Forr{\'o} and Thomas Pichler and Philipp Vecera and Frank Hauke and Andreas Hirsch",
year = "2015",
month = "11",
day = "1",
doi = "10.1002/pssb.201552296",
language = "English",
volume = "252",
pages = "2438--2443",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "11",

}

TY - JOUR

T1 - Transport, magnetic and vibrational properties of chemically exfoliated few-layer graphene

AU - Márkus, Bence G.

AU - Simon, F.

AU - Chacón-Torres, Julio C.

AU - Reich, Stephanie

AU - Szirmai, Péter

AU - Náfrádi, Bálint

AU - Forró, László

AU - Pichler, Thomas

AU - Vecera, Philipp

AU - Hauke, Frank

AU - Hirsch, Andreas

PY - 2015/11/1

Y1 - 2015/11/1

N2 - Abstractauthoren We study the vibrational, magnetic and transport properties of Few Layer Graphene (FLG) using Raman and electron spin resonance spectroscopy and microwave conductivity measurements. FLG samples were produced using wet chemical exfoliation with different post-processing, namely ultrasound treatment, shear mixing, and magnetic stirring. Raman spectroscopy shows a low intensity D mode which attests a high sample quality. The G mode is present at 1580 cm-1 as expected for graphene. The 2D mode consists of 2 components with varying intensities among the different samples. This is assigned to the presence of single and few layer graphene in the samples. Electron Spin Resonance (ESR) spectroscopy shows a main line in all types of materials with a width of about 1 mT and a g-factor in the range of 2.005-2.010. Paramagnetic defect centers with a uniaxial g-factor anisotropy are identified, which shows that these are related to the local sp2 bonds of the material. All kinds of investigated FLGs have a temperature dependent resistance which is compatible with a small gap semiconductor. The difference in resistance is related to the different grain size of the samples.

AB - Abstractauthoren We study the vibrational, magnetic and transport properties of Few Layer Graphene (FLG) using Raman and electron spin resonance spectroscopy and microwave conductivity measurements. FLG samples were produced using wet chemical exfoliation with different post-processing, namely ultrasound treatment, shear mixing, and magnetic stirring. Raman spectroscopy shows a low intensity D mode which attests a high sample quality. The G mode is present at 1580 cm-1 as expected for graphene. The 2D mode consists of 2 components with varying intensities among the different samples. This is assigned to the presence of single and few layer graphene in the samples. Electron Spin Resonance (ESR) spectroscopy shows a main line in all types of materials with a width of about 1 mT and a g-factor in the range of 2.005-2.010. Paramagnetic defect centers with a uniaxial g-factor anisotropy are identified, which shows that these are related to the local sp2 bonds of the material. All kinds of investigated FLGs have a temperature dependent resistance which is compatible with a small gap semiconductor. The difference in resistance is related to the different grain size of the samples.

KW - Chemical exfoliation

KW - ESR

KW - Graphene

KW - Microwave conductivity

KW - Raman

UR - http://www.scopus.com/inward/record.url?scp=84946500270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84946500270&partnerID=8YFLogxK

U2 - 10.1002/pssb.201552296

DO - 10.1002/pssb.201552296

M3 - Article

AN - SCOPUS:84946500270

VL - 252

SP - 2438

EP - 2443

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 11

ER -