Transmission electron microscopy characterisation of metalorganic chemical vapour deposition grown GaN layers

B. Pécz, M. A. Di Forte-Poisson, L. Tóth, G. Radnóczi, G. Huhn, V. Papaioannou, J. Stoemenos

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

GaN layers grown onto sapphire substrates by metalorganic chemical vapour deposition were characterised by optical microscopy, transmission electron microscopy and atomic force microscopy measurements. Mirror like surfaces were obtained at certain growth conditions despite the hexagonal based pyramids found on the growth surface. The typical pyramids have a base diameter of 20-30 μm and height of about 1.5-3 μm. The GaN layers are of the wurtzite type and epitaxially oriented to the sapphire substrate. Beside the threading dislocations, hexagonal rods of GaN surrounded by inversion domain boundaries are observed. An AlN layer has been formed at the interface region during the nitridation process of sapphire.

Original languageEnglish
Pages (from-to)93-96
Number of pages4
JournalMaterials Science and Engineering B
Volume50
Issue number1-3
Publication statusPublished - Dec 18 1997

Fingerprint

Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
metalorganic chemical vapor deposition
sapphire
Transmission electron microscopy
pyramids
transmission electron microscopy
Nitridation
Substrates
wurtzite
Optical microscopy
Atomic force microscopy
Mirrors
rods
atomic force microscopy
inversions
mirrors
microscopy

Keywords

  • AFM
  • MOCVD
  • TEM

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Transmission electron microscopy characterisation of metalorganic chemical vapour deposition grown GaN layers. / Pécz, B.; Di Forte-Poisson, M. A.; Tóth, L.; Radnóczi, G.; Huhn, G.; Papaioannou, V.; Stoemenos, J.

In: Materials Science and Engineering B, Vol. 50, No. 1-3, 18.12.1997, p. 93-96.

Research output: Contribution to journalArticle

@article{7060435370454c14997370af9ba9a8d2,
title = "Transmission electron microscopy characterisation of metalorganic chemical vapour deposition grown GaN layers",
abstract = "GaN layers grown onto sapphire substrates by metalorganic chemical vapour deposition were characterised by optical microscopy, transmission electron microscopy and atomic force microscopy measurements. Mirror like surfaces were obtained at certain growth conditions despite the hexagonal based pyramids found on the growth surface. The typical pyramids have a base diameter of 20-30 μm and height of about 1.5-3 μm. The GaN layers are of the wurtzite type and epitaxially oriented to the sapphire substrate. Beside the threading dislocations, hexagonal rods of GaN surrounded by inversion domain boundaries are observed. An AlN layer has been formed at the interface region during the nitridation process of sapphire.",
keywords = "AFM, MOCVD, TEM",
author = "B. P{\'e}cz and {Di Forte-Poisson}, {M. A.} and L. T{\'o}th and G. Radn{\'o}czi and G. Huhn and V. Papaioannou and J. Stoemenos",
year = "1997",
month = "12",
day = "18",
language = "English",
volume = "50",
pages = "93--96",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "1-3",

}

TY - JOUR

T1 - Transmission electron microscopy characterisation of metalorganic chemical vapour deposition grown GaN layers

AU - Pécz, B.

AU - Di Forte-Poisson, M. A.

AU - Tóth, L.

AU - Radnóczi, G.

AU - Huhn, G.

AU - Papaioannou, V.

AU - Stoemenos, J.

PY - 1997/12/18

Y1 - 1997/12/18

N2 - GaN layers grown onto sapphire substrates by metalorganic chemical vapour deposition were characterised by optical microscopy, transmission electron microscopy and atomic force microscopy measurements. Mirror like surfaces were obtained at certain growth conditions despite the hexagonal based pyramids found on the growth surface. The typical pyramids have a base diameter of 20-30 μm and height of about 1.5-3 μm. The GaN layers are of the wurtzite type and epitaxially oriented to the sapphire substrate. Beside the threading dislocations, hexagonal rods of GaN surrounded by inversion domain boundaries are observed. An AlN layer has been formed at the interface region during the nitridation process of sapphire.

AB - GaN layers grown onto sapphire substrates by metalorganic chemical vapour deposition were characterised by optical microscopy, transmission electron microscopy and atomic force microscopy measurements. Mirror like surfaces were obtained at certain growth conditions despite the hexagonal based pyramids found on the growth surface. The typical pyramids have a base diameter of 20-30 μm and height of about 1.5-3 μm. The GaN layers are of the wurtzite type and epitaxially oriented to the sapphire substrate. Beside the threading dislocations, hexagonal rods of GaN surrounded by inversion domain boundaries are observed. An AlN layer has been formed at the interface region during the nitridation process of sapphire.

KW - AFM

KW - MOCVD

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=0344236915&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344236915&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0344236915

VL - 50

SP - 93

EP - 96

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -