Transition from anomalous kinetics toward Fickian diffusion for Si dissolution into amorphous Ge

Zoltán Balogh, Zoltán Erd́lyi, Dezsö L. Beke, Gábor A. Langer, Attila Csik, Hans Gerd Boyen, Ulf Wiedwald, Paul Ziemann, Alain Portavoce, Christophe Girardeaux

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21 Citations (Scopus)

Abstract

Over the last years, several experimental and theoretical studies of diffusion kinetics on the nanoscale have shown that the time evolution (x t kc) differs from the classical Fickian law (kc =0.5). However, all work was based on crystalline samples or models, so far. In this letter, we report on the diffusion kinetics of a thin amorphous Si layer into amorphous Ge to account for the rising importance of amorphous materials in nanodevices. Employing surface sensitive techniques, the initial kc was found at 0.7±0.1. Moreover, after some monolayers of Si dissolved into the Ge, kc changes to the generally expected classical Fickian law with kc =0.5.

Original languageEnglish
Article number143104
JournalApplied Physics Letters
Volume92
Issue number14
DOIs
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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