Transient RTA of low-dose high energy phosphorus implanted silicon

Istvan Barsony, Jean Luc Heideman, Jan Middelhoek

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

A novel ramped RTA technique is proposed for efficient low thermal budget post-implantation annealing of low-dose high energy P-implanted silicon wafers. Results obtained with this short effective annealing time of 300ms on 3inches substrates proved quite convincing in comparison with conventional furnace anneal performance. Full activation, minimum profile motion and generation rates below 0.3mA/cm3 could be achieved in the subsurface region, which is of interest for device applications. Inhomogeneity of the sheet resistivity due to transient temperature gradients across the wafer remained at 2%, comparable to or lower than in furnace annealed samples.

Original languageEnglish
Pages437-440
Number of pages4
Publication statusPublished - Dec 1 1990
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: Aug 22 1990Aug 24 1990

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period8/22/908/24/90

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Transient RTA of low-dose high energy phosphorus implanted silicon'. Together they form a unique fingerprint.

  • Cite this

    Barsony, I., Heideman, J. L., & Middelhoek, J. (1990). Transient RTA of low-dose high energy phosphorus implanted silicon. 437-440. Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, .