Transient RTA of low-dose high energy phosphorus implanted silicon

I. Bársony, Jean Luc Heideman, Jan Middelhoek

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A novel ramped RTA technique is proposed for efficient low thermal budget post-implantation annealing of low-dose high energy P-implanted silicon wafers. Results obtained with this short effective annealing time of 300ms on 3inches substrates proved quite convincing in comparison with conventional furnace anneal performance. Full activation, minimum profile motion and generation rates below 0.3mA/cm3 could be achieved in the subsurface region, which is of interest for device applications. Inhomogeneity of the sheet resistivity due to transient temperature gradients across the wafer remained at 2%, comparable to or lower than in furnace annealed samples.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
Editors Anon
PublisherPubl by Business Cent for Acad Soc Japan
Pages437-440
Number of pages4
Publication statusPublished - 1990
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: Aug 22 1990Aug 24 1990

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period8/22/908/24/90

Fingerprint

Rapid thermal annealing
Phosphorus
Furnaces
Annealing
Silicon
Silicon wafers
Thermal gradients
Chemical activation
Substrates
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Bársony, I., Heideman, J. L., & Middelhoek, J. (1990). Transient RTA of low-dose high energy phosphorus implanted silicon. In Anon (Ed.), Conference on Solid State Devices and Materials (pp. 437-440). Publ by Business Cent for Acad Soc Japan.

Transient RTA of low-dose high energy phosphorus implanted silicon. / Bársony, I.; Heideman, Jean Luc; Middelhoek, Jan.

Conference on Solid State Devices and Materials. ed. / Anon. Publ by Business Cent for Acad Soc Japan, 1990. p. 437-440.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bársony, I, Heideman, JL & Middelhoek, J 1990, Transient RTA of low-dose high energy phosphorus implanted silicon. in Anon (ed.), Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, pp. 437-440, 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, 8/22/90.
Bársony I, Heideman JL, Middelhoek J. Transient RTA of low-dose high energy phosphorus implanted silicon. In Anon, editor, Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan. 1990. p. 437-440
Bársony, I. ; Heideman, Jean Luc ; Middelhoek, Jan. / Transient RTA of low-dose high energy phosphorus implanted silicon. Conference on Solid State Devices and Materials. editor / Anon. Publ by Business Cent for Acad Soc Japan, 1990. pp. 437-440
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