Topology of twin junctions in epitaxial β-SiC

V. Papaioannou, Ph Komninou, G. P. Dimitrakopulos, K. Zekentes, B. Pecz, Th Karakostas, J. Stoemenos

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The island growth of β-SiC on vicinal (001) Si is studied by HREM and AFM. The initial nuclei have the morphology of tetragonal pyramids. Growth proceeds by a dendritic mechanism resulting in a large density of primary twins and stacking faults. The density of planar defects is reduced dramatically with increasing distance from the substrate. Mutual twin annihilation was studied taking into account interfacial connectivity principles developed recently. The secondary defects that are geometrically necessary for such a mechanism were identified. It has been shown that, for the formation of closed defect topologies, junction lines of planar defects are introduced. This has been verified using computer simulation of HREM images.

Original languageEnglish
Pages (from-to)1362-1364
Number of pages3
JournalDiamond and Related Materials
Volume6
Issue number10
DOIs
Publication statusPublished - Aug 1997

Keywords

  • Epitaxial β-SiC
  • Interfacial connectivity
  • Planar defects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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  • Cite this

    Papaioannou, V., Komninou, P., Dimitrakopulos, G. P., Zekentes, K., Pecz, B., Karakostas, T., & Stoemenos, J. (1997). Topology of twin junctions in epitaxial β-SiC. Diamond and Related Materials, 6(10), 1362-1364. https://doi.org/10.1016/S0925-9635(97)00093-9