TOF-RBS with medium energy heavy ion probe for semiconductor process analysis

Kei Hayashi, Hirosuke Takayama, Masao Ishikawa, Satoshi Abo, Tivadar Lohner, Mikio Takai

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

Medium energy (80-400 keV) heavy ion (Be, Si, Ar) beams with diameters from 20 nm (focused ion beam with a liquid metal ion source) up to 500 μm (Cockcroft-Walton type accelerator) have been used to enhance scattering cross-section in Rutherford backscattering spectroscopy (RBS). A multi scaling time-of-flight (TOF) detecting system with a large area micro channel plate (MCP) detector was installed to obtain high counting rate and enhanced mass resolution. TOF-RBS spectra obtained using He+, Be+, Si+ and Ar+ probes for 5 and 10 nm thick Au deposited on Si and As implanted Si at 3 and 35 keV to doses of 1.2 × 1015 and 5 × 1015 cm-2, respectively, were compared in mass separation, sensitivity and total charge.

Original languageEnglish
Pages (from-to)589-592
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume219-220
Issue number1-4
DOIs
Publication statusPublished - Jun 1 2004
EventProceedings of the Sixteenth International Conference on Ion - Albuquerque, NM., United States
Duration: Jun 29 2003Jul 4 2003

Keywords

  • Cockcroft-Walton
  • Detection of heavy metals
  • FIB
  • Heavy ions
  • RBS
  • TOF

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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