Tin dioxide sol-gel derived thin films deposited on porous silicon

C. Cobianu, C. Savaniu, O. Buiu, D. Dascalu, M. Zaharescu, C. Parlog, A. Berg, B. Pécz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SnO2 and SnO2:Sb sol-gel derived thin films have been prepared from tin (II) ethylhexanoate and tin (IV) ethoxide precursors (the later not reported before) in order to be used for gas sensing applications where porous silicon is used as a substrate. Transparent, crack-free and adherent layers were obtained on different types of substrates (Si, SiO2/Si). By energy dispersive X-ray spectroscopy (EDXS) performed on the cross section of the porosified silicon (PS) coupled with XTEM analysis, the penetration of the SnO2 sol-phase in the nanometric pores followed by the SnO2 consolidation film in the pores of the PS, during subsequent annealing at 500°C has been experimentally proved.

Original languageEnglish
Title of host publicationProceedings of the International Semiconductor Conference, CAS
Editors Anon
PublisherIEEE
Pages633-636
Number of pages4
Volume2
Publication statusPublished - 1996
EventProceedings of the 1996 International Semiconductor Conference. Part 2 (of 2) - Sinaia, Rom
Duration: Oct 9 1996Oct 12 1996

Other

OtherProceedings of the 1996 International Semiconductor Conference. Part 2 (of 2)
CitySinaia, Rom
Period10/9/9610/12/96

Fingerprint

Tin dioxide
Porous silicon
Tin
Sol-gels
Thin films
Silicon
Substrates
Sols
Consolidation
Annealing
Cracks
Gases
X-Ray Emission Spectrometry

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Cobianu, C., Savaniu, C., Buiu, O., Dascalu, D., Zaharescu, M., Parlog, C., ... Pécz, B. (1996). Tin dioxide sol-gel derived thin films deposited on porous silicon. In Anon (Ed.), Proceedings of the International Semiconductor Conference, CAS (Vol. 2, pp. 633-636). IEEE.

Tin dioxide sol-gel derived thin films deposited on porous silicon. / Cobianu, C.; Savaniu, C.; Buiu, O.; Dascalu, D.; Zaharescu, M.; Parlog, C.; Berg, A.; Pécz, B.

Proceedings of the International Semiconductor Conference, CAS. ed. / Anon. Vol. 2 IEEE, 1996. p. 633-636.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Cobianu, C, Savaniu, C, Buiu, O, Dascalu, D, Zaharescu, M, Parlog, C, Berg, A & Pécz, B 1996, Tin dioxide sol-gel derived thin films deposited on porous silicon. in Anon (ed.), Proceedings of the International Semiconductor Conference, CAS. vol. 2, IEEE, pp. 633-636, Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2), Sinaia, Rom, 10/9/96.
Cobianu C, Savaniu C, Buiu O, Dascalu D, Zaharescu M, Parlog C et al. Tin dioxide sol-gel derived thin films deposited on porous silicon. In Anon, editor, Proceedings of the International Semiconductor Conference, CAS. Vol. 2. IEEE. 1996. p. 633-636
Cobianu, C. ; Savaniu, C. ; Buiu, O. ; Dascalu, D. ; Zaharescu, M. ; Parlog, C. ; Berg, A. ; Pécz, B. / Tin dioxide sol-gel derived thin films deposited on porous silicon. Proceedings of the International Semiconductor Conference, CAS. editor / Anon. Vol. 2 IEEE, 1996. pp. 633-636
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AU - Cobianu, C.

AU - Savaniu, C.

AU - Buiu, O.

AU - Dascalu, D.

AU - Zaharescu, M.

AU - Parlog, C.

AU - Berg, A.

AU - Pécz, B.

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AB - SnO2 and SnO2:Sb sol-gel derived thin films have been prepared from tin (II) ethylhexanoate and tin (IV) ethoxide precursors (the later not reported before) in order to be used for gas sensing applications where porous silicon is used as a substrate. Transparent, crack-free and adherent layers were obtained on different types of substrates (Si, SiO2/Si). By energy dispersive X-ray spectroscopy (EDXS) performed on the cross section of the porosified silicon (PS) coupled with XTEM analysis, the penetration of the SnO2 sol-phase in the nanometric pores followed by the SnO2 consolidation film in the pores of the PS, during subsequent annealing at 500°C has been experimentally proved.

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