Tin dioxide sol-gel derived thin films deposited on porous silicon

C. Cobianu, C. Savaniu, O. Buiu, D. Dascalu, M. Zaharescu, C. Parlog, A. Berg, B. Pecz

Research output: Contribution to conferencePaper

Abstract

SnO2 and SnO2:Sb sol-gel derived thin films have been prepared from tin (II) ethylhexanoate and tin (IV) ethoxide precursors (the later not reported before) in order to be used for gas sensing applications where porous silicon is used as a substrate. Transparent, crack-free and adherent layers were obtained on different types of substrates (Si, SiO2/Si). By energy dispersive X-ray spectroscopy (EDXS) performed on the cross section of the porosified silicon (PS) coupled with XTEM analysis, the penetration of the SnO2 sol-phase in the nanometric pores followed by the SnO2 consolidation film in the pores of the PS, during subsequent annealing at 500°C has been experimentally proved.

Original languageEnglish
Pages633-636
Number of pages4
Publication statusPublished - Jan 1 1996
EventProceedings of the 1996 International Semiconductor Conference. Part 2 (of 2) - Sinaia, Rom
Duration: Oct 9 1996Oct 12 1996

Other

OtherProceedings of the 1996 International Semiconductor Conference. Part 2 (of 2)
CitySinaia, Rom
Period10/9/9610/12/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Cobianu, C., Savaniu, C., Buiu, O., Dascalu, D., Zaharescu, M., Parlog, C., Berg, A., & Pecz, B. (1996). Tin dioxide sol-gel derived thin films deposited on porous silicon. 633-636. Paper presented at Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2), Sinaia, Rom, .