Time of flight elastic recoil detection analysis with toroidal electrostatic analyzer for ultra shallow dopant profiling

Satoshi Abo, Hidemasa Horiuchi, Fujio Wakaya, Gabor Battistig, Tivadar Lohner, Mikio Takai

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A time of flight (TOF) elastic recoil detection analysis (ERDA) with a toroidal electrostatic analyzer (TEA) using 100 keV Ar + probe was developed for B profiling in a Si substrate with low energy ion implantation for shrunk semiconductor devices. In the original ERDA, Bohr energy straggling at a stopping foil affects an energy resolution. Thus, in this study, a flight time from the sample to the TEA detector was used for a mass separation in ERDA without the stopping foil. A beam incident angle normal to the sample and a recoil scattering angle were 75°and 50°, respectively. The samples were Si substrates with and without B + implantation at 2 keV with a dose of 1.5 × 10 16/cm 2. A boron depth profile was calculated from the difference of the ERDA spectra with TEA for the Si samples with and without B + implantation. The recoiled B + and Si + signals were well separated in the TOF-ERDA spectra for B + implanted Si with TEA applied voltages of 0.45 to 1.13 kV. The TOF-ERDA spectra with TEA applied voltages of 0.45 to 3.44 kV were converted to the ERDA spectra for B + and Si +. The B segregation at the surface was observed in both B depth profile calculated from the decrease in the Si yield by ERDA and the ERDA spectrum for B + converted from the TOF-ERDA spectra.

Original languageEnglish
Pages (from-to)732-735
Number of pages4
JournalSurface and Interface Analysis
Volume44
Issue number6
DOIs
Publication statusPublished - Jun 1 2012

Keywords

  • elastic recoil detection analysis (ERDA)
  • time of flight (TOF)
  • toroidal electrostatic analyzer (TEA)

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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