Time-Dependent Density Functional Study on the Excitation Spectrum of Point Defects in Semiconductors

Research output: Chapter in Book/Report/Conference proceedingChapter

Original languageEnglish
Title of host publicationAdvanced Calculations for Defects in Materials: Electronic Structure Methods
PublisherWiley-VCH
Pages341-358
Number of pages18
ISBN (Print)9783527410248
DOIs
Publication statusPublished - Jun 18 2011

Fingerprint

Diamond
Point defects
Vacancies
Density functional theory
Semiconductor materials
Defects
silicon carbide

Keywords

  • Defects
  • Density functional theory
  • Diamond
  • Hybrid functionals
  • Silicon carbide
  • Vacancies

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Gali, A. (2011). Time-Dependent Density Functional Study on the Excitation Spectrum of Point Defects in Semiconductors. In Advanced Calculations for Defects in Materials: Electronic Structure Methods (pp. 341-358). Wiley-VCH. https://doi.org/10.1002/9783527638529.ch18

Time-Dependent Density Functional Study on the Excitation Spectrum of Point Defects in Semiconductors. / Gali, A.

Advanced Calculations for Defects in Materials: Electronic Structure Methods. Wiley-VCH, 2011. p. 341-358.

Research output: Chapter in Book/Report/Conference proceedingChapter

Gali, A 2011, Time-Dependent Density Functional Study on the Excitation Spectrum of Point Defects in Semiconductors. in Advanced Calculations for Defects in Materials: Electronic Structure Methods. Wiley-VCH, pp. 341-358. https://doi.org/10.1002/9783527638529.ch18
Gali A. Time-Dependent Density Functional Study on the Excitation Spectrum of Point Defects in Semiconductors. In Advanced Calculations for Defects in Materials: Electronic Structure Methods. Wiley-VCH. 2011. p. 341-358 https://doi.org/10.1002/9783527638529.ch18
Gali, A. / Time-Dependent Density Functional Study on the Excitation Spectrum of Point Defects in Semiconductors. Advanced Calculations for Defects in Materials: Electronic Structure Methods. Wiley-VCH, 2011. pp. 341-358
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